Datasheet HMC8415LP6GE (Analog Devices) - 4

HerstellerAnalog Devices
Beschreibung40 W (46 dBm), 9 GHz to 10.5 GHz, GaN Power Amplifier
Seiten / Seite23 / 4 — HMC8415LP6GE. Data Sheet. TOTAL TARGET QUIESCENT CURRENT BY VDDxA/VDDxB. …
RevisionA
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DokumentenspracheEnglisch

HMC8415LP6GE. Data Sheet. TOTAL TARGET QUIESCENT CURRENT BY VDDxA/VDDxB. Table 3. Parameter. Symbol Min Typ. Max Unit

HMC8415LP6GE Data Sheet TOTAL TARGET QUIESCENT CURRENT BY VDDxA/VDDxB Table 3 Parameter Symbol Min Typ Max Unit

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HMC8415LP6GE Data Sheet TOTAL TARGET QUIESCENT CURRENT BY VDDxA/VDDxB Table 3. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
TARGET QUIESCENT CURRENT IDQ Adjust the VGG (VGGxA/VGGxB) from −4.0 V to −1.5 V to achieve an IDQ = 1000 mA typical VDDxA/VDDxB = 24 V 1000 mA VDDxA/VDDxB = 28 V 1000 mA VDDxA/VDDxB = 32 V 1000 mA Rev. A | Page 4 of 23 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS TOTAL TARGET QUIESCENT CURRENT BY VDDxA/VDDxB ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION TYPICAL APPLICATION CIRCUIT AND PULSOR CIRCUIT USING THE EV1HMC8415LP6G WITH THE DRAIN BIAS PULS0R BOARD RECOMMENDED BIAS SEQUENCE Power-Up Bias Concept for the EV1HMC8415LP6G with the Pulsor Power-Down Bias Concept for the EV1HMC8415LP6G with the Pulsor MAKING AVERAGE TO PULSED APPROXIMATIONS EVALUATION PCB BILL OF MATERIALS OUTLINE DIMENSIONS ORDERING GUIDE