Datasheet HMC8415LP6GE (Analog Devices) - 3
| Hersteller | Analog Devices |
| Beschreibung | 40 W (46 dBm), 9 GHz to 10.5 GHz, GaN Power Amplifier |
| Seiten / Seite | 23 / 3 — Data Sheet. HMC8415LP6GE. SPECIFICATIONS ELECTRICAL SPECIFICATIONS. Table … |
| Revision | A |
| Dateiformat / Größe | PDF / 518 Kb |
| Dokumentensprache | Englisch |
Data Sheet. HMC8415LP6GE. SPECIFICATIONS ELECTRICAL SPECIFICATIONS. Table 1. Parameter. Symbol Min Typ. Max
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Data Sheet HMC8415LP6GE SPECIFICATIONS ELECTRICAL SPECIFICATIONS
TA = 25°C, VDDxA/VDDxB = 28 V, target quiescent current (IDQ) = 1000 mA, drain bias pulse width = 100 µs, 10% duty cycle, and the frequency range = 9 GHz to 10 GHz, unless otherwise noted.
Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 9 10 GHz GAIN Small Signal 30 32.5 dB Small Signal Flatness 1 dB Power Gain 23 dB Input power (PIN) = 23 dBm 24 dB PIN = 21 dBm RETURN LOSS Input 20 dB Output 10 dB POWER Output Power POUT 46 dBm PIN = 23 dBm 45 dBm PIN = 21 dBm Power Added Efficiency PAE 40 % PIN = 23 dBm 37.5 % PIN = 21 dBm TARGET QUIESCENT CURRENT IDQ 1000 mA Adjust the VGG (VGGxA/VGGxB) between −4.0 V and −1.5 V to achieve an IDQ = 1000 mA typical, VGG (VGGxA/VGGxB) = −2.5 V typical to achieve IDQ = 1000 mA TA = 25°C, VDDxA/VDDxB = 28 V, IDQ = 1000 mA, drain bias pulse width = 100 µs, 10% duty cycle, and the frequency range = 10 GHz to 10.5 GHz, unless otherwise noted.
Table 2. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 10 10.5 GHz GAIN Small Signal 25.5 28 dB Small Signal Flatness 5 dB Power Gain 22 dB PIN = 23 dBm 23.5 dB PIN = 21 dBm RETURN LOSS Input 17 dB Output 8 dB POWER Output Power POUT 45 dBm PIN = 23 dBm 44.5 dBm PIN = 21 dBm Power Added Efficiency PAE 37.5 % PIN = 23 dBm 37.5 % PIN = 21 dBm TARGET QUIESCENT CURRENT IDQ 1000 mA Adjust the VGG (VGGxA/VGGxB) between −4.0 V and −1.5 V to achieve an IDQ = 1000 mA typical, VGG (VGGxA/VGGxB) = −2.5 V typical to achieve IDQ = 1000 mA Rev. A | Page 3 of 23 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS TOTAL TARGET QUIESCENT CURRENT BY VDDxA/VDDxB ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION TYPICAL APPLICATION CIRCUIT AND PULSOR CIRCUIT USING THE EV1HMC8415LP6G WITH THE DRAIN BIAS PULS0R BOARD RECOMMENDED BIAS SEQUENCE Power-Up Bias Concept for the EV1HMC8415LP6G with the Pulsor Power-Down Bias Concept for the EV1HMC8415LP6G with the Pulsor MAKING AVERAGE TO PULSED APPROXIMATIONS EVALUATION PCB BILL OF MATERIALS OUTLINE DIMENSIONS ORDERING GUIDE
TA = 25°C, VDDxA/VDDxB = 28 V, target quiescent current (IDQ) = 1000 mA, drain bias pulse width = 100 µs, 10% duty cycle, and the frequency range = 9 GHz to 10 GHz, unless otherwise noted.
Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 9 10 GHz GAIN Small Signal 30 32.5 dB Small Signal Flatness 1 dB Power Gain 23 dB Input power (PIN) = 23 dBm 24 dB PIN = 21 dBm RETURN LOSS Input 20 dB Output 10 dB POWER Output Power POUT 46 dBm PIN = 23 dBm 45 dBm PIN = 21 dBm Power Added Efficiency PAE 40 % PIN = 23 dBm 37.5 % PIN = 21 dBm TARGET QUIESCENT CURRENT IDQ 1000 mA Adjust the VGG (VGGxA/VGGxB) between −4.0 V and −1.5 V to achieve an IDQ = 1000 mA typical, VGG (VGGxA/VGGxB) = −2.5 V typical to achieve IDQ = 1000 mA TA = 25°C, VDDxA/VDDxB = 28 V, IDQ = 1000 mA, drain bias pulse width = 100 µs, 10% duty cycle, and the frequency range = 10 GHz to 10.5 GHz, unless otherwise noted.
Table 2. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 10 10.5 GHz GAIN Small Signal 25.5 28 dB Small Signal Flatness 5 dB Power Gain 22 dB PIN = 23 dBm 23.5 dB PIN = 21 dBm RETURN LOSS Input 17 dB Output 8 dB POWER Output Power POUT 45 dBm PIN = 23 dBm 44.5 dBm PIN = 21 dBm Power Added Efficiency PAE 37.5 % PIN = 23 dBm 37.5 % PIN = 21 dBm TARGET QUIESCENT CURRENT IDQ 1000 mA Adjust the VGG (VGGxA/VGGxB) between −4.0 V and −1.5 V to achieve an IDQ = 1000 mA typical, VGG (VGGxA/VGGxB) = −2.5 V typical to achieve IDQ = 1000 mA Rev. A | Page 3 of 23 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS TOTAL TARGET QUIESCENT CURRENT BY VDDxA/VDDxB ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION TYPICAL APPLICATION CIRCUIT AND PULSOR CIRCUIT USING THE EV1HMC8415LP6G WITH THE DRAIN BIAS PULS0R BOARD RECOMMENDED BIAS SEQUENCE Power-Up Bias Concept for the EV1HMC8415LP6G with the Pulsor Power-Down Bias Concept for the EV1HMC8415LP6G with the Pulsor MAKING AVERAGE TO PULSED APPROXIMATIONS EVALUATION PCB BILL OF MATERIALS OUTLINE DIMENSIONS ORDERING GUIDE