Datasheet ADMV7810 (Analog Devices) - 10
| Hersteller | Analog Devices |
| Beschreibung | 81 GHz to 86 GHz, 1 W E-Band Power Amplifier with Power Detector |
| Seiten / Seite | 18 / 10 — ADMV7810. Data Sheet. 1200. GAIN. P1dB. OUT. SAT. PAE. 1100. IDD. P SAT. … |
| Revision | A |
| Dateiformat / Größe | PDF / 435 Kb |
| Dokumentensprache | Englisch |
ADMV7810. Data Sheet. 1200. GAIN. P1dB. OUT. SAT. PAE. 1100. IDD. P SAT. ( E. 1000. ), P. d (. 900. I DD. 800. ), OU. 700. IN GA. 600. 500. –15 –13 –11 –9
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Textversion des Dokuments
ADMV7810 Data Sheet 40 30 1200 ) GAIN m P P1dB OUT GAIN dB P ( 35 SAT PAE ) 25 1100 % IDD P SAT ( E ), A m 30 20 1000 B ), P d ( m ) B dB A 1d 25 ( 15 m 900 P T ( T OU U I DD P ), P T 20 dB 10 800 ( ), OU IN B A d ( G 15 5 700 IN GA 10 0 600
0
500 600 700 800 900
027
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
-03 9- 9
DRAIN CURRENT (mA)
40 40 16
INPUT POWER (dBm)
16 Figure 27. Gain, Output P1dB, and PSAT vs. IDD, RF = 86 GHz Figure 30. Gain, POUT, PAE, and IDD vs. Input Power, RF = 86 GHz, IDD = 700 mA
30 1200 30 1200 POUT POUT GAIN GAIN PAE PAE ) 25 1100 ) 25 1100 % IDD % IDD ( ( E E A A 20 1000 20 1000 ), P ), P m ) m ) dB A dB A ( m ( m T 15 900 ( T 15 900 ( OU I DD OU I DD ), P ), P dB 10 800 dB 10 800 ( ( IN IN A A G G 5 700 5 700 0 600
8
0 600
1
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
-02
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
-03 9 9
INPUT POWER (dBm)
40 40 16
INPUT POWER (dBm)
16 Figure 28. Gain, POUT, PAE, and IDD vs. Input Power, RF = 81 GHz, IDD = 700 mA Figure 31. Gain, POUT, PAE, and IDD vs. Input Power, RF = 81 GHz, IDD = 800 mA
30 1200 30 1200 POUT POUT GAIN GAIN PAE PAE ) 25 1100 ) 25 1100 % IDD % IDD ( ( E E A A 20 1000 20 1000 ), P ), P m ) m ) dB A dB A ( m ( m T 15 900 ( T 15 900 ( OU I DD OU I DD ), P ), P dB 10 800 dB 10 800 ( ( IN IN A A G G 5 700 5 700 0 600
9
0 600
2
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
-02
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
-03 9 9
INPUT POWER (dBm)
40 40 16
INPUT POWER (dBm)
16 Figure 29. Gain, POUT, PAE, and IDD vs. Input Power, RF = 83.5 GHz, IDD = 700 mA Figure 32. Gain, POUT, PAE, and IDD vs. Input Power, RF = 83.5 GHz, IDD = 800 mA Rev. A | Page 10 of 18 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE
0
500 600 700 800 900
027
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
-03 9- 9
DRAIN CURRENT (mA)
40 40 16
INPUT POWER (dBm)
16 Figure 27. Gain, Output P1dB, and PSAT vs. IDD, RF = 86 GHz Figure 30. Gain, POUT, PAE, and IDD vs. Input Power, RF = 86 GHz, IDD = 700 mA
30 1200 30 1200 POUT POUT GAIN GAIN PAE PAE ) 25 1100 ) 25 1100 % IDD % IDD ( ( E E A A 20 1000 20 1000 ), P ), P m ) m ) dB A dB A ( m ( m T 15 900 ( T 15 900 ( OU I DD OU I DD ), P ), P dB 10 800 dB 10 800 ( ( IN IN A A G G 5 700 5 700 0 600
8
0 600
1
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
-02
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
-03 9 9
INPUT POWER (dBm)
40 40 16
INPUT POWER (dBm)
16 Figure 28. Gain, POUT, PAE, and IDD vs. Input Power, RF = 81 GHz, IDD = 700 mA Figure 31. Gain, POUT, PAE, and IDD vs. Input Power, RF = 81 GHz, IDD = 800 mA
30 1200 30 1200 POUT POUT GAIN GAIN PAE PAE ) 25 1100 ) 25 1100 % IDD % IDD ( ( E E A A 20 1000 20 1000 ), P ), P m ) m ) dB A dB A ( m ( m T 15 900 ( T 15 900 ( OU I DD OU I DD ), P ), P dB 10 800 dB 10 800 ( ( IN IN A A G G 5 700 5 700 0 600
9
0 600
2
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
-02
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
-03 9 9
INPUT POWER (dBm)
40 40 16
INPUT POWER (dBm)
16 Figure 29. Gain, POUT, PAE, and IDD vs. Input Power, RF = 83.5 GHz, IDD = 700 mA Figure 32. Gain, POUT, PAE, and IDD vs. Input Power, RF = 83.5 GHz, IDD = 800 mA Rev. A | Page 10 of 18 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE