Datasheet HMC930A (Analog Devices)

GaAs, pHEMT, MMIC, 0.25 W Power Amplifier, DC to 40 GHz Data Sheet HMC930A FEATURES FUNCTIONAL BLOCK DIAGRAM High output power for 1 dB compression (P1dB): 22 dBm 3 4 1 2 HMC930A High saturated output power (PSAT): 24 dBm High gain: 13 dB ACG ACG High output third-order intercept (IP3): 33.5 dBm 5 RFOUT/VDD Supply voltage: 10 V at 175 mA V 50 Ω matched input/output GG2 2 Die size: 2.82 mm × 1.50 mm × 0.1 mm 1 APPLICATIONS RFIN 4 3 ACG ACG
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Test instrumentation VGG1 8 7 6
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Microwave radios and VSATs
Figure 1.
Military and space Telecommunications infrastructure Fiber optics GENERAL DESCRIPTION
The HMC930A is a gal ium arsenide (GaAs), pseudomorphic, 8 GHz to 32 GHz, making it ideal for electronic warfare (EW), high electron mobility transfer (pHEMT), monolithic microwave electronic countermeasures (ECM), radar, and test equipment integrated circuit (MMIC), distributed power amplifier that applications. The HMC930A amplifier inputs/outputs (I/Os) are operates from dc to 40 GHz. The HMC930A provides 13 dB of internally matched to 50 Ω, facilitating integration into multichip gain, 33.5 dBm output IP3, and 22 dBm of output power at modules (MCMs). Al data is taken with the chip connected via 1 dB gain compression, requiring 175 mA from a 10 V supply. two 0.025 mm (1 mil) wire bonds of minimal length at 0.31 mm The HMC930A exhibits a slightly positive gain slope from (12 mils).
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Document Outline Features Applications Functional Block Diagram General Description Revision History Electrical Specifications DC to 12 GHz Frequency Range 12 GHz to 32 GHz Frequency Range 32 GHz to 40 GHz Frequency Range Total Supply Current by VDD Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Mounting and Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Mounting Wire Bonding Outline Dimensions Die Packaging Information Ordering Guide