Datasheet HMC907A (Analog Devices) - 10

HMC907A
v03.0218
GaAs pHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz Outline Drawing
IP H R - C E W O R & P IA IN This die utilizes fragile air bridges. Any pick-up tools used must not contact the die in the cross hatched area. NOTES: S - L 1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
Die Packaging Information
[1] R 2. DIE THICKNESS IS 0.004 (0.100) 3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE Standard Alternate IE 4. BOND PAD METALIZATION: GOLD GP-2 (Gel Pack) [2] 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND [1] Refer to the “Packaging Information” section for die LIF 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS packaging dimensions. 8. OVERALL DIE SIZE IS ±.002 P [2] For alternate packaging information contact Analog M Devices, Inc.. A
Pad Descriptions
Pad Number Function Description Interface Schematic 1 RFIN This pad is DC coupled and matched to 50 Ohms. RF output for amplifier. Connect DC bias (Vdd) network to 2 RFOUT & Vdd provide drain current (Idd). See application circuit herein. Die Bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Typical Performance Characteristics Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Reverse Isolation vs. Temperature Noise Figure vs. Frequency Gain, Power & Output IP3 vs. Supply Voltage @ 12 GHz Power Compression @ 2 GHz Power Dissipation Absolute Maximum Ratings Outline Drawing Die Packaging Information Pad Descriptions Assembly Diagram Application Circuit Mounting & Bonding Techniques for Millimeterwave GaAs MMICs