HMC263 v05.1017 GaAs MMIC LOW NOISEAMPLIFIER, 24 - 36 GHzAbsolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2) +5.5 Vdc IP RF Input Power (RFIN)(Vdd = +3 Vdc) -5 dBm Channel Temperature 175 °C IP H Continuous Pdiss (T = 85 °C) H 0.692 W (derate 7.69 mW/°C above 85 °C) Thermal Resistance E - C 130 °C/W (channel to die bottom) E - C IS Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C IS O O ELECTROSTATIC SENSITIVE DEVICE W N OBSERVE HANDLING PRECAUTIONS W N O O S - L S - L R R IE Outline Drawing IE LIF LIF P P M M A A NOTES: 1. ALL DIMENSIONS IN INCHES (MILLIMETERS) Die Packaging Information [1] 2. ALL TOLERANCES ARE ±0.001 (0.025) 3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND Standard Alternate 4. BOND PADS ARE 0.004 (0.100) SQUARE GP-2 (Gel Pack) [2] 5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150) 6. BACKSIDE METALLIZATION: GOLD [1] Refer to the “Packaging Information” section for die 7. BOND PAD METALLIZATION: GOLD packaging dimensions. [2] For alternate packaging information contact Analog Devices Inc. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 5 Application Support: Phone: 1-800-ANALOG-D 6