Datasheet HMC342 (Analog Devices) - 4
| Hersteller | Analog Devices |
| Beschreibung | GaAs MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz |
| Seiten / Seite | 6 / 4 — HMC342. GaAs MMIC LOW NOISE. AMPLIFIER, 13 - 25 GHz. Absolute Maximum … |
| Dateiformat / Größe | PDF / 310 Kb |
| Dokumentensprache | Englisch |
HMC342. GaAs MMIC LOW NOISE. AMPLIFIER, 13 - 25 GHz. Absolute Maximum Ratings. Outline Drawing. Die Packaging Information. 1 - 17
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Textversion des Dokuments
HMC342
v01.0907
GaAs MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz
1
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +5.5 Vdc RF Input Power (RFIN)(Vdd = +3 Vdc) -5 dBm IP Channel Temperature 175 °C H Continuous Pdiss (T = 85 °C) 0.326 W (derate 3.62 mW/°C above 85 °C) Thermal Resistance 276 °C/W (channel to die bottom) E - C Storage Temperature -65 to +150 °C IS Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE W NO OBSERVE HANDLING PRECAUTIONS O S - L
Outline Drawing
R IE IF L P M A NOTES:
Die Packaging Information
[1] 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” Standard Alternate 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD GP-2 (Gel Pack) [2] 5. BOND PAD METALLIZATION: GOLD [1] Refer to the “Packaging Information” section for die 6. BACKSIDE METAL IS GROUND. packaging dimensions. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. [2] For alternate packaging information contact Hittite Microwave Corporation. Info F rmoatr pr ion f iurcne, de ished b ly iv A e n r al y o a g D n evd to p ices is bla eli c eve o ed t rde o be ras: H ccuratite tiatne M d reli iacr ble ow . Ho av wev e C er, n o o rpo Fora r t p iro ic n e ,, 2 d 0 eli A ve lrpha R y, and toad, C o place hoel rd m er s s fo : Ard, MA 01 nalog Devic 8 e 2 s 4 , Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rde hone r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .ehit r o t nilte in .c e ao t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com
1 - 17
Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r app tion Su s p @ po h rt itt : P ite ho .c ne o : 1m -800-ANALOG-D
v01.0907
GaAs MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz
1
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +5.5 Vdc RF Input Power (RFIN)(Vdd = +3 Vdc) -5 dBm IP Channel Temperature 175 °C H Continuous Pdiss (T = 85 °C) 0.326 W (derate 3.62 mW/°C above 85 °C) Thermal Resistance 276 °C/W (channel to die bottom) E - C Storage Temperature -65 to +150 °C IS Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE W NO OBSERVE HANDLING PRECAUTIONS O S - L
Outline Drawing
R IE IF L P M A NOTES:
Die Packaging Information
[1] 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” Standard Alternate 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD GP-2 (Gel Pack) [2] 5. BOND PAD METALLIZATION: GOLD [1] Refer to the “Packaging Information” section for die 6. BACKSIDE METAL IS GROUND. packaging dimensions. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. [2] For alternate packaging information contact Hittite Microwave Corporation. Info F rmoatr pr ion f iurcne, de ished b ly iv A e n r al y o a g D n evd to p ices is bla eli c eve o ed t rde o be ras: H ccuratite tiatne M d reli iacr ble ow . Ho av wev e C er, n o o rpo Fora r t p iro ic n e ,, 2 d 0 eli A ve lrpha R y, and toad, C o place hoel rd m er s s fo : Ard, MA 01 nalog Devic 8 e 2 s 4 , Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rde hone r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .ehit r o t nilte in .c e ao t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com
1 - 17
Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r app tion Su s p @ po h rt itt : P ite ho .c ne o : 1m -800-ANALOG-D