Datasheet HMC519 (Analog Devices) - 3
| Hersteller | Analog Devices |
| Beschreibung | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 32 GHz |
| Seiten / Seite | 6 / 3 — HMC519. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 18 - 32 GHz. P1dB vs. … |
| Dateiformat / Größe | PDF / 616 Kb |
| Dokumentensprache | Englisch |
HMC519. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 18 - 32 GHz. P1dB vs. Temperature. Psat vs. Temperature
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HMC519
v04.0918
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 32 GHz P1dB vs. Temperature Psat vs. Temperature
20 20 IP 16 16 H ) m 12 m 12 (dB (dB at E - C 1dB s +25C 8 P P 8 +85C -55C IS +25C 4 +85C 4 O -55C 0 0 16 18 20 22 24 26 28 30 32 34 16 18 20 22 24 26 28 30 32 34 W N FREQUENCY (GHz) FREQUENCY (GHz) O
Reverse Isolation vs. Temperature Power Compression @ 24 GHz
S - L R 0 20 ) IE -10 +25C % ( +85C 16 E -20 -55C A ) LIF B ), P d -30 B Pout ( d 12 Gain P N ( PAE IO IN -40 T A M A L O ), G 8 -50 m A IS B d -60 t ( u 4 o P -70 -80 0 16 18 20 22 24 26 28 30 32 34 -20 -15 -10 -5 0 5 FREQUENCY (GHz) INPUT POWER (dBm)
Additive Phase Noise Vs Offset Frequency, Gain, Noise Figure & Power vs. RF Frequency = 26.5 GHz, Supply Voltage @ 24 GHz RF Input Power = 4 dBm (Psat)
20 10 -70 -80 Gain 16 8 ) -90 z m N B O /H d -100 ( IS Bc B 12 P1dB 6 E d F (d -110 1 IG ), P U ISE -120 B R O d 8 4 E N ( -130 IN Noise Figure d A B ) ASE G -140 4 2 PH -150 -160 0 0 2.5 3 3.5 -170 100 1K 10K 100K 1M Vdd (V) OFFSET FREQUENCY (Hz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
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Application Support: Phone: 1-800-ANALOG-D
v04.0918
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 32 GHz P1dB vs. Temperature Psat vs. Temperature
20 20 IP 16 16 H ) m 12 m 12 (dB (dB at E - C 1dB s +25C 8 P P 8 +85C -55C IS +25C 4 +85C 4 O -55C 0 0 16 18 20 22 24 26 28 30 32 34 16 18 20 22 24 26 28 30 32 34 W N FREQUENCY (GHz) FREQUENCY (GHz) O
Reverse Isolation vs. Temperature Power Compression @ 24 GHz
S - L R 0 20 ) IE -10 +25C % ( +85C 16 E -20 -55C A ) LIF B ), P d -30 B Pout ( d 12 Gain P N ( PAE IO IN -40 T A M A L O ), G 8 -50 m A IS B d -60 t ( u 4 o P -70 -80 0 16 18 20 22 24 26 28 30 32 34 -20 -15 -10 -5 0 5 FREQUENCY (GHz) INPUT POWER (dBm)
Additive Phase Noise Vs Offset Frequency, Gain, Noise Figure & Power vs. RF Frequency = 26.5 GHz, Supply Voltage @ 24 GHz RF Input Power = 4 dBm (Psat)
20 10 -70 -80 Gain 16 8 ) -90 z m N B O /H d -100 ( IS Bc B 12 P1dB 6 E d F (d -110 1 IG ), P U ISE -120 B R O d 8 4 E N ( -130 IN Noise Figure d A B ) ASE G -140 4 2 PH -150 -160 0 0 2.5 3 3.5 -170 100 1K 10K 100K 1M Vdd (V) OFFSET FREQUENCY (Hz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
3
Application Support: Phone: 1-800-ANALOG-D