Datasheet HMC564 (Analog Devices) - 5
| Hersteller | Analog Devices |
| Beschreibung | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 13.5 GHz |
| Seiten / Seite | 7 / 5 — HMC564. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 7 - 13.5 GHz. Absolute … |
| Dateiformat / Größe | PDF / 632 Kb |
| Dokumentensprache | Englisch |
HMC564. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 7 - 13.5 GHz. Absolute Maximum Ratings. Typical Supply Current vs. Vdd
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Textversion des Dokuments
HMC564
v02.0618
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 13.5 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd1, Vdd2) +3.5 Vdc Vdd (Vdc) Idd (mA) IP RF Input Power (RFIN)(Vdd = +3.0 Vdc) +20 dBm +2.5 49 H Channel Temperature 175 °C +3.0 51 Continuous Pdiss (T= 85 °C) +3.5 53 C 1.17 W (derate 12.97 mW/°C above 85 °C) Note: Amplifier will operate over full voltage ranges shown - Thermal Resistance above. S 77 °C/W (channel to die bottom) R Storage Temperature -65 to +150 °C IE Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE LIF OBSERVE HANDLING PRECAUTIONS P M A E
Outline Drawing
IS O N W LO NOTES:
Die Packaging Information
[1] 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” Standard Alternate 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD GP-2 (Gel Pack) [2] 5. BOND PAD METALLIZATION: GOLD [1] Refer to the “Packaging Information” section for die 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
5
Application Support: Phone: 1-800-ANALOG-D
v02.0618
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 13.5 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd1, Vdd2) +3.5 Vdc Vdd (Vdc) Idd (mA) IP RF Input Power (RFIN)(Vdd = +3.0 Vdc) +20 dBm +2.5 49 H Channel Temperature 175 °C +3.0 51 Continuous Pdiss (T= 85 °C) +3.5 53 C 1.17 W (derate 12.97 mW/°C above 85 °C) Note: Amplifier will operate over full voltage ranges shown - Thermal Resistance above. S 77 °C/W (channel to die bottom) R Storage Temperature -65 to +150 °C IE Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE LIF OBSERVE HANDLING PRECAUTIONS P M A E
Outline Drawing
IS O N W LO NOTES:
Die Packaging Information
[1] 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” Standard Alternate 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD GP-2 (Gel Pack) [2] 5. BOND PAD METALLIZATION: GOLD [1] Refer to the “Packaging Information” section for die 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
5
Application Support: Phone: 1-800-ANALOG-D