Datasheet HMC564LC4 (Analog Devices) - 3
| Hersteller | Analog Devices |
| Beschreibung | GaAs SMT pHEMT LOW NOISE AMPLIFIER, 7 - 14 GHz |
| Seiten / Seite | 7 / 3 — HMC564LC4. GaAs SMT pHEMT LOW NOISE. AMPLIFIER, 7 - 14 GHz. P1dB vs. … |
| Dateiformat / Größe | PDF / 1.1 Mb |
| Dokumentensprache | Englisch |
HMC564LC4. GaAs SMT pHEMT LOW NOISE. AMPLIFIER, 7 - 14 GHz. P1dB vs. Temperature. Psat vs. Temperature
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HMC564LC4
v08.0618
GaAs SMT pHEMT LOW NOISE AMPLIFIER, 7 - 14 GHz P1dB vs. Temperature Psat vs. Temperature
20 20 16 16 T M ) m 12 m 12 (dB (dB at s +25C 1dB 8 P 8 P +85C -40C E - S +25C 4 +85C 4 IS -40C O 0 0 6 7 8 9 10 11 12 13 14 15 6 7 8 9 10 11 12 13 14 15 FREQUENCY (GHz) FREQUENCY (GHz) W N O
Reverse Isolation vs. Temperature Power Compression @ 8 GHz
S - L 0 20 R ) (% -10 +25C E +85C IE A 15 -40C ) B ), P d B ( -20 d N ( LIF IO IN 10 T A P A L -30 ), G O m M IS B d Pout t ( 5 Gain A u -40 PAE o P -50 0 6 7 8 9 10 11 12 13 14 15 -15 -10 -5 0 FREQUENCY (GHz) INPUT POWER (dBm)
Additive Phase Noise Vs Offset Frequency, Gain, Power & Noise Figure RF Frequency = 11 GHz, vs. Supply Voltage @ 8 GHz RF Input Power = 2.5 dBm (Psat)
20 10 -80 18 9 -90 16 8 ) -100 ) z m P1dB Gain N /H B 14 7 O -110 d Bc ( IS (d B 12 6 E -120 d F 1 ISE 10 5 IG -130 O ), P U N B R d 8 4 E -140 ( Noise Figure ( IN ASE 6 3 d -150 A B ) G PH 4 2 -160 2 1 -170 0 0 -180 100 1K 10K 100K 1M 10M 2.5 3 3.5 OFFSET FREQUENCY (Hz) Vdd (Vdc) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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v08.0618
GaAs SMT pHEMT LOW NOISE AMPLIFIER, 7 - 14 GHz P1dB vs. Temperature Psat vs. Temperature
20 20 16 16 T M ) m 12 m 12 (dB (dB at s +25C 1dB 8 P 8 P +85C -40C E - S +25C 4 +85C 4 IS -40C O 0 0 6 7 8 9 10 11 12 13 14 15 6 7 8 9 10 11 12 13 14 15 FREQUENCY (GHz) FREQUENCY (GHz) W N O
Reverse Isolation vs. Temperature Power Compression @ 8 GHz
S - L 0 20 R ) (% -10 +25C E +85C IE A 15 -40C ) B ), P d B ( -20 d N ( LIF IO IN 10 T A P A L -30 ), G O m M IS B d Pout t ( 5 Gain A u -40 PAE o P -50 0 6 7 8 9 10 11 12 13 14 15 -15 -10 -5 0 FREQUENCY (GHz) INPUT POWER (dBm)
Additive Phase Noise Vs Offset Frequency, Gain, Power & Noise Figure RF Frequency = 11 GHz, vs. Supply Voltage @ 8 GHz RF Input Power = 2.5 dBm (Psat)
20 10 -80 18 9 -90 16 8 ) -100 ) z m P1dB Gain N /H B 14 7 O -110 d Bc ( IS (d B 12 6 E -120 d F 1 ISE 10 5 IG -130 O ), P U N B R d 8 4 E -140 ( Noise Figure ( IN ASE 6 3 d -150 A B ) G PH 4 2 -160 2 1 -170 0 0 -180 100 1K 10K 100K 1M 10M 2.5 3 3.5 OFFSET FREQUENCY (Hz) Vdd (Vdc) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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