Datasheet HMC565 (Analog Devices) - 4
| Hersteller | Analog Devices |
| Beschreibung | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 6 - 20 GHz |
| Seiten / Seite | 6 / 4 — HMC565. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 6 - 20 GHz. Absolute … |
| Dateiformat / Größe | PDF / 581 Kb |
| Dokumentensprache | Englisch |
HMC565. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 6 - 20 GHz. Absolute Maximum Ratings. Typical Supply Current vs. Vdd
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HMC565
v03.1217
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 6 - 20 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +3.5 Vdc Vdd (Vdc) Idd (mA) RF Input Power (RFIN)(Vdd = +3.0 Vdc) 10 dBm +2.5 51 +3.0 53 IP Channel Temperature 175 °C +3.5 55 H Continuous Pdiss (T= 85 °C) 0.75 W (derate 8.9 mW/°C above 85 °C) Note: Amplifier will operate over full voltage ranges shown C above. Thermal Resistance - 119 °C/W (channel to die bottom) S Storage Temperature -65 to +150 °C R Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE IE ESD Sensitivity (HBM) Class 1A OBSERVE HANDLING PRECAUTIONS LIF P M A
Outline Drawing
E IS O N W LO NOTES:
Die Packaging Information
[1] 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” Standard Alternate 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD GP-2 (Gel Pack) [2] 5. BOND PAD METALLIZATION: GOLD [1] Refer to the “Packaging Information” section for die 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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v03.1217
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 6 - 20 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +3.5 Vdc Vdd (Vdc) Idd (mA) RF Input Power (RFIN)(Vdd = +3.0 Vdc) 10 dBm +2.5 51 +3.0 53 IP Channel Temperature 175 °C +3.5 55 H Continuous Pdiss (T= 85 °C) 0.75 W (derate 8.9 mW/°C above 85 °C) Note: Amplifier will operate over full voltage ranges shown C above. Thermal Resistance - 119 °C/W (channel to die bottom) S Storage Temperature -65 to +150 °C R Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE IE ESD Sensitivity (HBM) Class 1A OBSERVE HANDLING PRECAUTIONS LIF P M A
Outline Drawing
E IS O N W LO NOTES:
Die Packaging Information
[1] 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” Standard Alternate 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD GP-2 (Gel Pack) [2] 5. BOND PAD METALLIZATION: GOLD [1] Refer to the “Packaging Information” section for die 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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