Datasheet HMC-ALH102 (Analog Devices) - 5
| Hersteller | Analog Devices |
| Beschreibung | GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz |
| Seiten / Seite | 6 / 5 — HMC-ALH102. GaAs HEMT MMIC WIDEBAND. LOW NOISE AMPLIFIER, 2 - 20 GHz. … |
| Dateiformat / Größe | PDF / 464 Kb |
| Dokumentensprache | Englisch |
HMC-ALH102. GaAs HEMT MMIC WIDEBAND. LOW NOISE AMPLIFIER, 2 - 20 GHz. Assembly Diagram
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HMC-ALH102
v03.0118
GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz Assembly Diagram
IP H C - S R IE LIF P M A E IS O N W LO Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output.10 Ohms Note 3: Gate bond pads (VG) exist on the upper & lower sides of the MMIC for assembly convenience. For best performance the unused pad should be attached to a 100pF cap to ground, but is not required. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
5
Application Support: Phone: 1-800-ANALOG-D
v03.0118
GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz Assembly Diagram
IP H C - S R IE LIF P M A E IS O N W LO Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output.10 Ohms Note 3: Gate bond pads (VG) exist on the upper & lower sides of the MMIC for assembly convenience. For best performance the unused pad should be attached to a 100pF cap to ground, but is not required. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
5
Application Support: Phone: 1-800-ANALOG-D