Datasheet HMC-ALH310 (Analog Devices)
| Hersteller | Analog Devices |
| Beschreibung | GaAs HEMT LOW NOISE AMPLIFIER, 37 - 42 GHz |
| Seiten / Seite | 6 / 1 — HMC-ALH310. GaAs HEMT LOW NOISE. AMPLIFIER, 37 - 42 GHz. Typical … |
| Dateiformat / Größe | PDF / 273 Kb |
| Dokumentensprache | Englisch |
HMC-ALH310. GaAs HEMT LOW NOISE. AMPLIFIER, 37 - 42 GHz. Typical Applications. Features. Functional Diagram. General Description
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HMC-ALH310
v02.0209
GaAs HEMT LOW NOISE AMPLIFIER, 37 - 42 GHz
1
Typical Applications Features
This HMC-ALH310 is ideal for: Noise Figure: 3.5 dB IP • Point-to-Point Radios P1dB: +12 dBm H • Point-to-Multi-Point Radios Gain: 22 dB C • Military & Space Supply Voltage: +2.5V - 50 Ohm Matched Input/Output RS Die Size: 1.80 x 0.73 x 0.1 mm IE IF L P
Functional Diagram General Description
M The HMC-ALH310 is a three stage GaAs HEMT MMIC A Low Noise Amplifi er (LNA) which operates between E 37 and 42 GHz. The HMC-ALH310 features 22 dB of small signal gain, 3.5 dB of noise fi gure and an output IS power of +12 dBm at 1dB compression from a +2.5V O supply voltage. All bond pads and the die backside N are Ti/Au metallized and the amplifi er device is fully passivated for reliable operation. This versatile LNA W is compatible with conventional die attach methods, O as well as thermocompression and thermosonic L wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
Electrical Specifi cations, T = +25° C, Vdd = 2.5V, Idd = 52 mA* A
Parameter Min. Typ. Max. Units Frequency Range 37 - 42 GHz Gain 20 22 dB Noise Figure 3.5 4.5 dB Input Return Loss 4 dB Output Return Loss 8 dB Output Power for 1 dB Compression (P1dB) 12 dBm Supply Current (Idd)(Vdd= 2.5V,Vgg= -0.3V Typ.) 52 mA *Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V) to achieve Idd = 52 mA total Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
1 - 138
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
v02.0209
GaAs HEMT LOW NOISE AMPLIFIER, 37 - 42 GHz
1
Typical Applications Features
This HMC-ALH310 is ideal for: Noise Figure: 3.5 dB IP • Point-to-Point Radios P1dB: +12 dBm H • Point-to-Multi-Point Radios Gain: 22 dB C • Military & Space Supply Voltage: +2.5V - 50 Ohm Matched Input/Output RS Die Size: 1.80 x 0.73 x 0.1 mm IE IF L P
Functional Diagram General Description
M The HMC-ALH310 is a three stage GaAs HEMT MMIC A Low Noise Amplifi er (LNA) which operates between E 37 and 42 GHz. The HMC-ALH310 features 22 dB of small signal gain, 3.5 dB of noise fi gure and an output IS power of +12 dBm at 1dB compression from a +2.5V O supply voltage. All bond pads and the die backside N are Ti/Au metallized and the amplifi er device is fully passivated for reliable operation. This versatile LNA W is compatible with conventional die attach methods, O as well as thermocompression and thermosonic L wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
Electrical Specifi cations, T = +25° C, Vdd = 2.5V, Idd = 52 mA* A
Parameter Min. Typ. Max. Units Frequency Range 37 - 42 GHz Gain 20 22 dB Noise Figure 3.5 4.5 dB Input Return Loss 4 dB Output Return Loss 8 dB Output Power for 1 dB Compression (P1dB) 12 dBm Supply Current (Idd)(Vdd= 2.5V,Vgg= -0.3V Typ.) 52 mA *Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V) to achieve Idd = 52 mA total Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
1 - 138
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D