Datasheet HMC-AUH232 (Analog Devices) - 2

HMC-AUH232
v02.0209
GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz Electrical Specifi cations
(Continued)* Parameter Min. Typ. Max. Units 10% to 90% Rise / Fall Time[2] 6 - 12 ps Output Voltage Level[3] 8 Vp-p Additive jitter (RMS) 0.4 ps 1 dB Output Gain Compression Point at 20 GHz 16.5 dBm 20 GHz @ Pin= 15 dBm[4] 22 22 dBm Output Power 40 GHz @ Pin= 15 dBm[4] 17 19.5 dBm 4 Power Dissipation 0.9 1.25 W 5 GHz 5.4 dB 10 & 15 GHz 4.2 dB IP 20 GHz 4.6 dB H Noise Figure 25 GHz 5.4 dB 30 GHz 8.3 dB 35 GHz 7.4 dB S - C 40 GHz 9.1 dB R [1] Measured with a 1 GHz aperture [4] Verifi ed at RF on-wafer probe. Vgg1 is adjusted until the drain cur- rent is 200 mA and Vgg2= 1.5 V.The drain voltage is applied through IE [2] Measurement limited by rise/fall time of input reference signal the RF output port using a bias tee with 5 volts on the bias Tee. [3] With a 2.7 V input signal IF P-P L *Unless otherwise indicated, all measurements are from probed die P M R A
Recommended Operating Conditions Reliability Characteristics
E Parameter Symbol Min. Typ. Max. Units Parameter Symbol Typ. Units IV Positive Supply Voltage V 5 6 V Activation Energy E 1.7 eV D A R Positive Supply Current I 150 180 225 mA Median time to Failure (MTF) D MTF 6 x 109 Hours @125 °C Channel Temperature RF Input Power 12 16 dBm L D Bias Current Adjust Vgg1 -1.5 -0.2 V A Output Voltage Adjust Vgg2 0 1.5 2 V IC Operating Temperature T 0 25 85 °C OP T Power Dissipation P 0.9 1.25 W D P
Thermal Characteristics
P T T R MTF DISS BASE CH E & O Parameter (W) (°C) (°C) (°C/W) (Hrs) V A Thermal Resistance to back side of chip 1.25 85 145 48 5.8 x 108 Thermal resistance to backside of carrier using 25.4 W 1.25 85 155 56 1.8 x 108 um of 84-1LMIT epoxy O Thermal Resistance to back side of chip 1.25 110 170 48 3.9 x 107 R Thermal resistance to backside of carrier using 25.4 1.25 110 180 56 1.4 x 107 um of 84-1LMIT epoxy IC M Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com
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