Datasheet HMC753 (Analog Devices) - 10

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HMC753 Data Sheet APPLICATIONS INFORMATION
The HMC753 is a GaAs, MMIC, high electron mobility
BIASING PROCEDURES
transistor (HEMT), low noise, wideband amplifier. The recommended biasing procedure during power-up is as The amplifier uses two field effect transistors (FETs) in series, follows: source to drain. The basic schematic for a fundamental cell is 1. Connect GND. shown in Figure 21. 2. Set VGG1 to −1 V.
VDD
3. Set VDD to 5 V. 4. Set V
RFOUT
GG2 to 1.5 V. 5. Increase V
V
GG1 to achieve a typical quiescent current (IDQ) =
GG2
55 mA. 6. Apply the RF signal.
RFIN
021 The recommended biasing procedure during power-down is as
VGG1
13494- follows: Figure 21. Fundamental Cell Schematic 1. Turn off the RF signal. All measurements for this device are taken using the evaluation 2. Decrease VGG1 to −1 V to achieve IDQ = 0 mA. printed circuit board (PCB) in its default configuration. 3. Decrease VGG2 to 0 V. 4. Decrease VDD to 0 V. 5. Increase VGG1 to 0 V. The VDD = 5 V and IDQ = 55 mA bias conditions are the operating points recommended to optimize the overal performance. Unless otherwise noted, the data shown is taken using the recommended bias conditions. Operation of the HMC753 at different bias conditions may result in performance that differs from the Typical Performance Characteristics shown in the data sheet. Biasing the HMC753 for higher drain current typical y results in higher P1dB and output IP3 at the expense of increased power consumption. Rev. E | Page 10 of 13 Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications Electrical Specifications Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Evaluation PCB Outline Dimensions Ordering Guide