Datasheet HMC1126 (Analog Devices)

GaAs, pHEMT, MMIC, Power Amplifier, 2 GHz to 50 GHz Data Sheet HMC1126 FEATURES FUNCTIONAL BLOCK DIAGRAM Output power for 1 dB compression (P1dB): 17.5 dB typical VDD Saturated output power (P 2 SAT): 21 dBm typical HMC1126 Gain: 11 dB typical Output third-order intercept (IP3): 28 dBm typical Supply voltage: 5 V at 65 mA 3 RFOUT 50 Ω matched input/output Die size: 2.3 mm × 1.45 mm × 0.05 mm RFIN 1 APPLICATIONS Test instrumentation 5 4
001
Microwave radios and VSATs VGG1 VGG2
13083-
Military and space
Figure 1.
Telecommunications infrastructure Fiber optics GENERAL DESCRIPTION
The HMC1126 is a gallium arsenide (GaAs), pseudomorphic high The HMC1126 amplifier inputs/outputs are internal y matched electron mobility transfer (pHEMT), monolithic microwave to 50 Ω facilitating integration into multichip modules (MCMs). integrated circuit (MMIC), distributed power amplifier that Al data is taken with the chip connected via two 0.025 mm (1 mil) operates from 2 GHz to 50 GHz. The HMC1126 provides 11 dB wire bonds of minimal length 0.31 mm (12 mils). of gain, 28 dBm output IP3, and 17.5 dBm of output power at 1 dB gain compression, while requiring 65 mA from a 5 V supply.
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Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY ELECTRICAL SPECIFICATIONS 2 GHz TO 10 GHz FREQUENCY RANGE 10 GHz TO 26 GHz FREQUENCY RANGE 26 GHz TO 40 GHz FREQUENCY RANGE 40 GHz TO 50 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS APPLICATIONS INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions Mounting Wire Bonding APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE