Datasheet HMC8411LP2FE (Analog Devices)

Low Noise Amplifier, 0.01 GHz to 10 GHz Data Sheet HMC8411LP2FE FEATURES FUNCTIONAL BLOCK DIAGRAM Low noise figure: 1.7 dB typical HMC8411LP2FE Single positive supply (self biased) TOP VIEW (Not to Scale) High gain: 15.5 dB typical R 1 6 GND High OIP3: 34 dBm typical BIAS 6-lead, 2 mm × 2 mm LFCSP RF 2 5 IN RFOUT/VDD
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NC 3 4 NC APPLICATIONS
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Test instrumentation
Figure 1.
Military communications GENERAL DESCRIPTION
The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic The HMC8411LP2FE also features inputs and outputs that are microwave integrated circuit (MMIC), pseudomorphic high internal y matched to 50 Ω, making the device ideal for surface- electron mobility transistor (pHEMT), low noise wideband mounted technology (SMT)-based, high capacity microwave amplifier that operates from 0.01 GHz to 10 GHz. radio applications. The HMC8411LP2FE provides a typical gain of 15.5 dB, a The HMC8411LP2FE is housed in a RoHS-compliant, 2 mm × 1.7 dB typical noise figure, and a typical output third-order 2 mm, 6-lead LFCSP. intercept (OIP3) of 34 dBm, requiring only 55 mA from a 5 V Multifunction pin names may be referenced by their relevant supply voltage. The saturated output power (PSAT) of 19.5 dBm function only. typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase/quadrature (I/Q), or image rejection mixers.
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Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications 0.01 GHz to 1 GHz Frequency Range 1 GHz to 6 GHz Frequency Range 6 GHz to 10 GHz Frequency Range Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Recommended Bias Sequencing During Power-Up During Power-Down Typical Application Circuit Evaluation Board Outline Dimensions Ordering Guide