Datasheet ADH519S (Analog Devices) - 4

ADH519S TABLE I – ELECTRICAL PERFORMANCE CHARACTERISTICS Parameter Conditions 1/ Limits Unless otherwise Group A Units See notes at end of table Symbol specified Subgroups Min Max
RF CHARACTERISTICS Gain S21 17.5 GHz 4 11.8 dB 5,6 10.5 M,D,P,L,R 4 11.8 28.5 GHz 4 11 5,6 10 M,D,P,L,R 4 11 31.5 GHz 4 10.5 5,6 9.5 M,D,P,L,R 4 10.5 Gain Variation Over Temp 2/ 3/ 17.5 GHz 4,5,6 0.026 dB/°C S21 / °C 28.5 GHz 4,5,6 0.026 31.5 GHz 4,5,6 0.026 Noise Figure NF 17.5 GHz 4 4 dB 5,6 4.5 M,D,P,L,R 4 4 28.5 GHz 4 4 5,6 4.5 M,D,P,L,R 4 4 31.5 GHz 4 4.5 5,6 5 M,D,P,L,R 4 4.5 Output Power for 1dB OP1dB 17.5 GHz 4 7.2 dBm Compression 2/ 3/ 5/ 5 6.5 6 8.5 28.5 GHz 4 7.2 5 6.5 6 8.5 31.5 GHz 4 8.5 5 8 6 9.5 Output Third Order Intercept OIP3 17.5 GHz 4 17.2 dBm 2/ 3/ 6/ 5 16 6 19 28.5 GHz 4 17.2 5 16 6 19 31.5 GHz 4 19.2 5 17.5 6 20.5 BIAS AND SUPPLY CURRENT Supply Current 4/ IDD 1,2,3 95 mA M,D,P,L,R 1 95 mA TABLE I NOTES: 1/ TA nom = 25ºC, TA max = 85ºC, and TA min = -40ºC unless otherwise noted, VDD1 = VDD2, = VDD3 = +3V 2/ Parameter is part of device initial characterization which is only repeated after design and process changes or with subsequent wafer lots. 3/ Parameter is not tested post irradiation 4/ Supply current measured with no signal at RF IN. 5/ Input power sweep -5 dBm to 10 dBm 6/ f1 power = f2 power = -5 dBm, Fixed Delta F = 1 MHz ASD0016589 Rev. A | Page 4 of 8