Datasheet HMC788A-EP (Analog Devices)
| Hersteller | Analog Devices |
| Beschreibung | 0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT RF Gain Block |
| Seiten / Seite | 8 / 1 — 0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT. RF Gain Block. Enhanced Product. … |
| Revision | B |
| Dateiformat / Größe | PDF / 142 Kb |
| Dokumentensprache | Englisch |
0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT. RF Gain Block. Enhanced Product. HMC788A-EP. FEATURES. FUNCTIONAL BLOCK DIAGRAM
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0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT RF Gain Block Enhanced Product HMC788A-EP FEATURES FUNCTIONAL BLOCK DIAGRAM Gain: 14 dB typical HMC788A-EP Operational frequency range: 0.01 GHz to 10 GHz NIC 1 6 NIC Input/output internally matched to 50 Ω RF 2 5 IN RFOUT High input linearity GND 3 4 NIC 1 dB compression (P1dB): 20 dBm typical PACKAGE Output third-order intercept (OIP3): 33 dBm typical
001
BASE Supply voltage: 5 V typical
16213-
2 mm × 2 mm, 6-lead lead frame chip scale package
Figure 1.
ENHANCED PRODUCT FEATURES Supports defense and aerospace applications (AQEC standard) Extended industrial temperature range: −55°C to +105°C Controlled manufacturing baseline One assembly/test site 1 fabrication site Enhanced product change notification Qualification data available on request APPLICATIONS Cellular, 3G, LTE, WiMAX, and 4G LO driver applications Microwave radio Test and measurement equipment Ultra wideband (UWB) communications GENERAL DESCRIPTION
The HMC788A-EP is a 0.01 GHz to 10 GHz, gain block, The HMC788A-EP offers 14 dB of gain and an OIP3 of 33 dBm monolithic microwave integrated circuit (MMIC) amplifier while requiring only 76 mA from a 5 V supply. using gallium arsenide (GaAs) and pseudomorphic high The Darlington feedback pair exhibits reduced sensitivity to electron mobility transistor (pHEMT) technology. normal process variations and yields excellent gain stability over This 2 mm × 2 mm LFCSP amplifier can be used as either a temperature while requiring a minimal number of external bias cascadable 50 Ω gain stage, or to drive the local oscillator (LO) components. port of many of the single and double balanced mixers from Additional application and technical information can be found Analog Devices, Inc. with up to 20 dBm output power. in the HMC788A data sheet.
Rev. B Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2017–2019 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline Features Enhanced Product Features Applications Functional Block Diagram General Description Revision History Specifications Electrical Specifications Absolute Maximum Ratings Thermal Resistance Power Derating Curves ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Outline Dimensions Ordering Guide
001
BASE Supply voltage: 5 V typical
16213-
2 mm × 2 mm, 6-lead lead frame chip scale package
Figure 1.
ENHANCED PRODUCT FEATURES Supports defense and aerospace applications (AQEC standard) Extended industrial temperature range: −55°C to +105°C Controlled manufacturing baseline One assembly/test site 1 fabrication site Enhanced product change notification Qualification data available on request APPLICATIONS Cellular, 3G, LTE, WiMAX, and 4G LO driver applications Microwave radio Test and measurement equipment Ultra wideband (UWB) communications GENERAL DESCRIPTION
The HMC788A-EP is a 0.01 GHz to 10 GHz, gain block, The HMC788A-EP offers 14 dB of gain and an OIP3 of 33 dBm monolithic microwave integrated circuit (MMIC) amplifier while requiring only 76 mA from a 5 V supply. using gallium arsenide (GaAs) and pseudomorphic high The Darlington feedback pair exhibits reduced sensitivity to electron mobility transistor (pHEMT) technology. normal process variations and yields excellent gain stability over This 2 mm × 2 mm LFCSP amplifier can be used as either a temperature while requiring a minimal number of external bias cascadable 50 Ω gain stage, or to drive the local oscillator (LO) components. port of many of the single and double balanced mixers from Additional application and technical information can be found Analog Devices, Inc. with up to 20 dBm output power. in the HMC788A data sheet.
Rev. B Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2017–2019 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline Features Enhanced Product Features Applications Functional Block Diagram General Description Revision History Specifications Electrical Specifications Absolute Maximum Ratings Thermal Resistance Power Derating Curves ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Outline Dimensions Ordering Guide