Datasheet HMC441 (Analog Devices)
| Hersteller | Analog Devices |
| Beschreibung | GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz |
| Seiten / Seite | 8 / 1 — HMC441. GaAs pHEMT MMIC MEDIUM. POWER AMPLIFIER, 6 - 18 GHz. Typical … |
| Dateiformat / Größe | PDF / 518 Kb |
| Dokumentensprache | Englisch |
HMC441. GaAs pHEMT MMIC MEDIUM. POWER AMPLIFIER, 6 - 18 GHz. Typical Applications. Features. Functional Diagram
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HMC441
v09.0917
GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz Typical Applications Features
The HMC441 is ideal for: Gain: 15.5 dB IP • Point-to-Point and Point-to-Multi-Point Radios Saturated Power: +22 dBm @ 23% PAE H • VSAT Single Supply Voltage: +5V w/ Optional Gate Bias • LO Driver for HMC Mixers 50 Ohm Matched Input/Output S - C • Military EW & ECM R Die Size: 0.94 x 0.94 x 0.1 mm IE LIF
Functional Diagram General Description
P The HMC441 is an efficient GaAs PHEMT MMIC M Medium Power Amplifier which operates between 6 and 18 GHz. The amplifier provides 15.5 dB of gain, R A +22 dBm of saturated power, and 23% PAE from a E +5V supply voltage. An optional gate bias is provided to al ow adjustment of gain, RF output power, and DC W power dissipation. The HMC441 amplifier can easily O be integrated into Multi-Chip-Modules (MCMs) due to its small size. The backside of the die is both RF and DC ground, simplifying the assembly process R & P and reducing performance variation. All data is tested A with the chip in a 50 Ohm test fixture connected via E 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). LIN Vgg1, Vgg2: Optional Gate Bias
Electrical Specifications, T = +25° C, Vdd1 = Vdd2 = 5V, Vgg1 = Vgg2 = Open A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 7.0 - 8.0 8.0 - 12.5 12.5 - 14.0 14.0 - 15.5 GHz Gain 13 15.5 14 16.5 13 15.5 12 14.5 dB Gain Variation Over Temperature 0.015 0.02 0.015 0.02 0.015 0.02 0.015 0.02 dB/ °C Input Return Loss 10 13 15 14 dB Output Return Loss 14 17 23 18 dB Output Power for 1 dB Compression 15.5 18.5 16 19 17 20 17 20 dBm (P1dB) Saturated Output Power (Psat) 17 20 18 21 19 22 19 22 dBm Output Third Order Intercept (IP3) 29 31 32 32 dBm Noise Figure 5.0 4.5 4.5 4.5 dB Supply Current (Idd) 90 115 90 115 90 90 115 mA Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D
v09.0917
GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz Typical Applications Features
The HMC441 is ideal for: Gain: 15.5 dB IP • Point-to-Point and Point-to-Multi-Point Radios Saturated Power: +22 dBm @ 23% PAE H • VSAT Single Supply Voltage: +5V w/ Optional Gate Bias • LO Driver for HMC Mixers 50 Ohm Matched Input/Output S - C • Military EW & ECM R Die Size: 0.94 x 0.94 x 0.1 mm IE LIF
Functional Diagram General Description
P The HMC441 is an efficient GaAs PHEMT MMIC M Medium Power Amplifier which operates between 6 and 18 GHz. The amplifier provides 15.5 dB of gain, R A +22 dBm of saturated power, and 23% PAE from a E +5V supply voltage. An optional gate bias is provided to al ow adjustment of gain, RF output power, and DC W power dissipation. The HMC441 amplifier can easily O be integrated into Multi-Chip-Modules (MCMs) due to its small size. The backside of the die is both RF and DC ground, simplifying the assembly process R & P and reducing performance variation. All data is tested A with the chip in a 50 Ohm test fixture connected via E 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). LIN Vgg1, Vgg2: Optional Gate Bias
Electrical Specifications, T = +25° C, Vdd1 = Vdd2 = 5V, Vgg1 = Vgg2 = Open A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 7.0 - 8.0 8.0 - 12.5 12.5 - 14.0 14.0 - 15.5 GHz Gain 13 15.5 14 16.5 13 15.5 12 14.5 dB Gain Variation Over Temperature 0.015 0.02 0.015 0.02 0.015 0.02 0.015 0.02 dB/ °C Input Return Loss 10 13 15 14 dB Output Return Loss 14 17 23 18 dB Output Power for 1 dB Compression 15.5 18.5 16 19 17 20 17 20 dBm (P1dB) Saturated Output Power (Psat) 17 20 18 21 19 22 19 22 dBm Output Third Order Intercept (IP3) 29 31 32 32 dBm Noise Figure 5.0 4.5 4.5 4.5 dB Supply Current (Idd) 90 115 90 115 90 90 115 mA Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D