Datasheet HMC442 (Analog Devices)
| Hersteller | Analog Devices |
| Beschreibung | GaAs pHEMT MMIC MEDIUM POWER AMPLIFIERS, 17.5 - 25.5 GHz |
| Seiten / Seite | 6 / 1 — HMC442. GaAs pHEMT MMIC MEDIUM. POWER AMPLIFIERS, 17.5 - 25.5 GHz. … |
| Dateiformat / Größe | PDF / 374 Kb |
| Dokumentensprache | Englisch |
HMC442. GaAs pHEMT MMIC MEDIUM. POWER AMPLIFIERS, 17.5 - 25.5 GHz. Typical Applications. Features. Functional Diagram
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HMC442
v04.0913
GaAs pHEMT MMIC MEDIUM POWER AMPLIFIERS, 17.5 - 25.5 GHz Typical Applications Features
The HMC442 is ideal for use as a medium power Saturated Power: +23 dBm @ 25% PAE amplifier for: IP Gain: 15 dB H • Point-to-Point and Point-to-Multi-Point Radios Supply Voltage: +5V • VSAT 50 Ohm Matched Input/Output Die Size: 1.03 x 1.13 x 0.1 mm S - C R IE
Functional Diagram General Description
LIF The HMC442 is an efficient GaAs PHEMT MMIC P Medium Power Amplifier which operates between M 17.5 and 25.5 GHz. The HMC442 provides 15 dB of gain, +23 dBm of saturated power and 25% PAE from R A a +5V supply voltage. The amplifier chip can easily be E integrated into Multi-Chip-Modules (MCMs) due to its W small size. All data is tested with the chip in a 50 Ohm O test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). R & P A E LIN
Electrical Specifications, T = +25° C, Vdd = 5V, Idd = 85mA* A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 17.5 - 21.0 21.0 - 24.0 24.0 - 25.5 GHz Gain 12 14.5 12 15 13.5 16 dB Gain Variation Over Temperature 0.02 0.03 0.02 0.03 0.02 0.03 dB/ °C Input Return Loss 15 13 10 dB Output Return Loss 10 10 10 dB Output Power for 1 dB Compression (P1dB) 18 21 18.5 21.5 19 22 dBm Saturated Output Power (Psat) 20 23 20 23 20 23.5 dBm Output Third Order Intercept (IP3) 29 28 27 dBm Noise Figure 6.5 5.5 6 dB Supply Current (Idd)(Vdd = 5V, Vgg = -1V Typ.) 85 110 85 110 85 110 mA * Adjust Vgg between -1.5 to -0.5V to achieve Idd = 85mA typical. Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D
v04.0913
GaAs pHEMT MMIC MEDIUM POWER AMPLIFIERS, 17.5 - 25.5 GHz Typical Applications Features
The HMC442 is ideal for use as a medium power Saturated Power: +23 dBm @ 25% PAE amplifier for: IP Gain: 15 dB H • Point-to-Point and Point-to-Multi-Point Radios Supply Voltage: +5V • VSAT 50 Ohm Matched Input/Output Die Size: 1.03 x 1.13 x 0.1 mm S - C R IE
Functional Diagram General Description
LIF The HMC442 is an efficient GaAs PHEMT MMIC P Medium Power Amplifier which operates between M 17.5 and 25.5 GHz. The HMC442 provides 15 dB of gain, +23 dBm of saturated power and 25% PAE from R A a +5V supply voltage. The amplifier chip can easily be E integrated into Multi-Chip-Modules (MCMs) due to its W small size. All data is tested with the chip in a 50 Ohm O test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). R & P A E LIN
Electrical Specifications, T = +25° C, Vdd = 5V, Idd = 85mA* A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 17.5 - 21.0 21.0 - 24.0 24.0 - 25.5 GHz Gain 12 14.5 12 15 13.5 16 dB Gain Variation Over Temperature 0.02 0.03 0.02 0.03 0.02 0.03 dB/ °C Input Return Loss 15 13 10 dB Output Return Loss 10 10 10 dB Output Power for 1 dB Compression (P1dB) 18 21 18.5 21.5 19 22 dBm Saturated Output Power (Psat) 20 23 20 23 20 23.5 dBm Output Third Order Intercept (IP3) 29 28 27 dBm Noise Figure 6.5 5.5 6 dB Supply Current (Idd)(Vdd = 5V, Vgg = -1V Typ.) 85 110 85 110 85 110 mA * Adjust Vgg between -1.5 to -0.5V to achieve Idd = 85mA typical. Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D