Datasheet HMC594 (Analog Devices) - 5
| Hersteller | Analog Devices |
| Beschreibung | GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz |
| Seiten / Seite | 6 / 5 — HMC594. GaAs pHEMT MMIC LOW NOISE. AMPLIFIER, 2 - 4 GHz. Pad … |
| Dateiformat / Größe | PDF / 413 Kb |
| Dokumentensprache | Englisch |
HMC594. GaAs pHEMT MMIC LOW NOISE. AMPLIFIER, 2 - 4 GHz. Pad Descriptions. Assembly Diagram
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Textversion des Dokuments
HMC594
v01.0312
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Pad Descriptions
pad Number function Description interface schematic 1, 3, 4, 6 Die bottom must be connected to rf/DC ground. Grounding of pads GND 1, 3, and 6 is optional. rf performance may be improved through ip Die Bottom grounding of these pads. No connection is required to pad 4. H This pad is AC coupled and matched to 2 rfiN 50 ohms from 2 - 4 GHz. e - C power supply Voltage for the amplifier. external bypass capacitors 5 Vdd is of 100 pF and 0.1 µF are required. o This pad is AC coupled and matched to 7 rfoUT 50 ohms from 2 - 4 GHz. w N Gate supply voltage for the amplifier. external bypass capacitors of lo 8 Vgg 100 pF and 0.1 µF are required. s - r ie
Assembly Diagram
lif p m A Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd ho e ne r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o tniltie n .c e ao t m
5
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D
v01.0312
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Pad Descriptions
pad Number function Description interface schematic 1, 3, 4, 6 Die bottom must be connected to rf/DC ground. Grounding of pads GND 1, 3, and 6 is optional. rf performance may be improved through ip Die Bottom grounding of these pads. No connection is required to pad 4. H This pad is AC coupled and matched to 2 rfiN 50 ohms from 2 - 4 GHz. e - C power supply Voltage for the amplifier. external bypass capacitors 5 Vdd is of 100 pF and 0.1 µF are required. o This pad is AC coupled and matched to 7 rfoUT 50 ohms from 2 - 4 GHz. w N Gate supply voltage for the amplifier. external bypass capacitors of lo 8 Vgg 100 pF and 0.1 µF are required. s - r ie
Assembly Diagram
lif p m A Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd ho e ne r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o tniltie n .c e ao t m
5
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D