Datasheet HMC608LC4 (Analog Devices)
| Hersteller | Analog Devices |
| Beschreibung | GaAs pHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz |
| Seiten / Seite | 8 / 1 — HMC608LC4. GaAs pHEMT MEDIUM. POWER AMPLIFIER, 9.5 - 11.5 GHz. Typical … |
| Dateiformat / Größe | PDF / 989 Kb |
| Dokumentensprache | Englisch |
HMC608LC4. GaAs pHEMT MEDIUM. POWER AMPLIFIER, 9.5 - 11.5 GHz. Typical Applications. Features. Functional Diagram
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HMC608LC4
v04.0617
GaAs pHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Typical Applications Features
The HMC608LC4 is ideal for: Output IP3: +33 dBm T • Point-to-Point Radios Saturated Power: +27.5 dBm @ 23% PAE M • Point-to-Multi-Point Radios Gain: 29.5 dB • Military End-Use Supply: +5V @ 310 mA R - S 50 Ohm Matched Input/Output E RoHS Compliant 4x4 mm SMT Package W O
Functional Diagram General Description
The HMC608LC4 is a high dynamic range GaAs R & P pHEMT MMIC Medium Power Amplifier housed in a A leadless “Pb free” SMT package. The amplifier has E two modes of operation: high gain mode (Vpd pin shorted to ground); and low gain mode (Vpd pin left IN open). The electrical specifications in the table below are shown for the amplifier operating in high gain S - L mode. Operating from 9.5 to 11.5 GHz, the amplifier R provides 29.5 dB of gain, +27.5 dBm of saturated power and 23% PAE from a +5V supply voltage. IE Noise figure is 6 dB while output IP3 is +33 dBm. The RF I/Os are DC blocked and matched to 50 Ohms LIF P for ease of use. The HMC608LC4 eliminates the need for wire bonding, al owing use of surface mount M manufacturing techniques. A
Electrical Specifications, T = +25° C, Vdd1, 2, 3 = 5V, Idd = 310 mA [1], Vpd = GND [2] A
Parameter Min. Typ. Max. Units Frequency Range 9.5 - 11.5 GHz Gain [3] 27 29.5 dB Gain Variation Over Temperature 0.02 0.03 dB/ °C Input Return Loss 13 dB Output Return Loss 19 dB Output Power for 1 dB Compression (P1dB) 23 27 dBm Saturated Output Power (Psat) 27.5 dBm Output Third Order Intercept (IP3) 33 dBm Noise Figure 6.0 dB Supply Current (Idd = Idd1 +Idd2 +Idd3)(Vdd = +5V, Vgg = -2.6V Typ.) [3] 310 350 mA [[1] Adjust Vgg between -3 to 0V to achieve Idd = 310 mA typical. [2] Vpd= ground for high gain mode, Vpd = open for low gain mode. [3] In low gain mode, typical gain is 22 dB and typical current is 67 mA. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D
v04.0617
GaAs pHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Typical Applications Features
The HMC608LC4 is ideal for: Output IP3: +33 dBm T • Point-to-Point Radios Saturated Power: +27.5 dBm @ 23% PAE M • Point-to-Multi-Point Radios Gain: 29.5 dB • Military End-Use Supply: +5V @ 310 mA R - S 50 Ohm Matched Input/Output E RoHS Compliant 4x4 mm SMT Package W O
Functional Diagram General Description
The HMC608LC4 is a high dynamic range GaAs R & P pHEMT MMIC Medium Power Amplifier housed in a A leadless “Pb free” SMT package. The amplifier has E two modes of operation: high gain mode (Vpd pin shorted to ground); and low gain mode (Vpd pin left IN open). The electrical specifications in the table below are shown for the amplifier operating in high gain S - L mode. Operating from 9.5 to 11.5 GHz, the amplifier R provides 29.5 dB of gain, +27.5 dBm of saturated power and 23% PAE from a +5V supply voltage. IE Noise figure is 6 dB while output IP3 is +33 dBm. The RF I/Os are DC blocked and matched to 50 Ohms LIF P for ease of use. The HMC608LC4 eliminates the need for wire bonding, al owing use of surface mount M manufacturing techniques. A
Electrical Specifications, T = +25° C, Vdd1, 2, 3 = 5V, Idd = 310 mA [1], Vpd = GND [2] A
Parameter Min. Typ. Max. Units Frequency Range 9.5 - 11.5 GHz Gain [3] 27 29.5 dB Gain Variation Over Temperature 0.02 0.03 dB/ °C Input Return Loss 13 dB Output Return Loss 19 dB Output Power for 1 dB Compression (P1dB) 23 27 dBm Saturated Output Power (Psat) 27.5 dBm Output Third Order Intercept (IP3) 33 dBm Noise Figure 6.0 dB Supply Current (Idd = Idd1 +Idd2 +Idd3)(Vdd = +5V, Vgg = -2.6V Typ.) [3] 310 350 mA [[1] Adjust Vgg between -3 to 0V to achieve Idd = 310 mA typical. [2] Vpd= ground for high gain mode, Vpd = open for low gain mode. [3] In low gain mode, typical gain is 22 dB and typical current is 67 mA. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D