Datasheet HMC609LC4 (Analog Devices) - 5

HMC609LC4
v03.0514
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Power Compression @ 3 GHz
25 T (%) M 20 PAE - S 15 (dB), E GAIN 10 IS O (dBm), Pout 5 Gain Pout PAE 0 W N -10 -8 -6 -4 -2 0 2 4 6 8 O INPUT POWER (dBm) S - L R
Absolute Maximum Ratings Typical Supply Current vs. Vdd
IE Drain Bias Voltage (Vdd) 7 Vdc Vdd (V) Idd (mA) LIF RF Input Power (RFIN)(Vdd = +6.0 Vdc) +15 dBm +5.5 160 P Channel Temperature 175 °C +6.0 170 M Continuous Pdiss (T= 85 °C) +6.5 180 1.1 W A (derate 16.7 mW/°C above 85 °C) Note: Amplifier will operate over full voltage range shown Thermal Resistance 60 °C/W (channel to ground paddle) above Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS I F nf o or r p mati r o in cfe ur , d nish e e l d iv b e y r A y a nalo n g d t Devi o p ces i la s c bele o ieve rd d t e o rbs e : H acc iutrtatite e M and ic reli rao bl w e. a H v o e C wever o , nrp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No rd Phoe n r O e: 7 n- 81-li 3 n 2 e a 9-4 t w 70 ww 0 • O . rdh e itt r o it nle i . n co e a m
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