Datasheet HMC-ABH209 (Analog Devices) - 3

HMC-ABH209
v03.0714
Gaas HEMT MMIC MEDIUM POWER AMPLIFIER, 55 - 65 GHz Absolute Maximum Ratings
Drain Bias Voltage +5.5 Vdc IP Gain Bias Voltage -1 to +0.3 Vdc ELECTROSTATIC SENSITIVE DEVICE H RF Input Power 10 dBm OBSERVE HANDLING PRECAUTIONS Storage Temperature -65 °C to + 150 °C Chennel Temperature +180 °C R - C
Outline Drawing
IE LIF P M R A E W O R & P A E LIN NOTES:
Die Packaging Information
[1] 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. Standard Alternate 3. BACKSIDE METALLIZATION: GOLD. GP-2 (Gel Pack) [2] 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. [1] Refer to the “Packaging Information” section for die 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. packaging dimensions. 7. OVERALL DIE SIZE ±.002” [2] For alternate packaging information contact Hittite Microwave Corporation. Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m
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license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 p o lica rti a o p n S p u s p @ po h rt itt : P ite ho . n c e om : 1-800-ANALOG-D