Datasheet HMC-ABH241 (Analog Devices)
| Hersteller | Analog Devices |
| Beschreibung | GaAs HEMT MMIC MEDIUM POWER Amplifier, 50 - 66 GHz |
| Seiten / Seite | 6 / 1 — HMC-ABH241. Gaas HEMT MMIC MEDIUM POWER. amplifier, 50 - 66 GHz. Typical … |
| Dateiformat / Größe | PDF / 390 Kb |
| Dokumentensprache | Englisch |
HMC-ABH241. Gaas HEMT MMIC MEDIUM POWER. amplifier, 50 - 66 GHz. Typical applications. Features. Functional Diagram
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HMC-ABH241
v03.0412
Gaas HEMT MMIC MEDIUM POWER amplifier, 50 - 66 GHz Typical applications Features
This HmC-aBH241 is ideal for: output iP3: +25 dBm iP • Short Haul / High Capacity Links P1dB: +17 dBm H • Wireless LAN Bridges Gain: 24 dB • Military & Space supply Voltage: +5V 50 ohm matched input/output s - C r Die size: 3.2 x 1.42 x 0.1 mm ie Lif P
Functional Diagram General Description
m The HmC-aBH241 is a four stage Gaas HemT mmiC a medium Power amplifier which operates between r 50 and 66 GHz. The HmC-aBH241 provides 24 dB e of gain, and an output power of +17 dBm at 1dB w compression from a +5V supply voltage. all bond pads o and the die backside are Ti/Au metal ized and the amplifier device is ful y passivated for reliable operation. The HmC-aBH241 Gaas HemT mmiC medium Power amplifier is compatible with conventional die r & P attach methods, as well as thermocompression and a thermosonic wire bonding, making it ideal for MCM and e hybrid microcircuit applications. all data shown herein is measured with the chip in a 50 ohm environment Lin and contacted with rf probes.
Electrical specifications, T = +25° C, a Vdd1= Vdd2= Vdd3= 5V, Idd1 + Idd2 + Idd3= 220ma
[2] Parameter min. Typ. max. Units frequency range 50 - 66 GHz Gain 19 24 dB input return Loss 15 dB output return Loss 15 dB output Power for 1 dB Compression (P1dB) 17 dBm output Third order intercept (iP3) 25 dBm saturated output Power (Psat) 19 dBm supply Current (idd1 + idd2 + idd3) 220 ma [1] Unless otherwise indicated, all measurements are from probed die [2] adjust Vgg1 = Vgg2 = Vgg3 between -1V to +0.3V (typ -0.3V) to achieve iddtotal = 220ma Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd ho e ne r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o tniltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D
v03.0412
Gaas HEMT MMIC MEDIUM POWER amplifier, 50 - 66 GHz Typical applications Features
This HmC-aBH241 is ideal for: output iP3: +25 dBm iP • Short Haul / High Capacity Links P1dB: +17 dBm H • Wireless LAN Bridges Gain: 24 dB • Military & Space supply Voltage: +5V 50 ohm matched input/output s - C r Die size: 3.2 x 1.42 x 0.1 mm ie Lif P
Functional Diagram General Description
m The HmC-aBH241 is a four stage Gaas HemT mmiC a medium Power amplifier which operates between r 50 and 66 GHz. The HmC-aBH241 provides 24 dB e of gain, and an output power of +17 dBm at 1dB w compression from a +5V supply voltage. all bond pads o and the die backside are Ti/Au metal ized and the amplifier device is ful y passivated for reliable operation. The HmC-aBH241 Gaas HemT mmiC medium Power amplifier is compatible with conventional die r & P attach methods, as well as thermocompression and a thermosonic wire bonding, making it ideal for MCM and e hybrid microcircuit applications. all data shown herein is measured with the chip in a 50 ohm environment Lin and contacted with rf probes.
Electrical specifications, T = +25° C, a Vdd1= Vdd2= Vdd3= 5V, Idd1 + Idd2 + Idd3= 220ma
[2] Parameter min. Typ. max. Units frequency range 50 - 66 GHz Gain 19 24 dB input return Loss 15 dB output return Loss 15 dB output Power for 1 dB Compression (P1dB) 17 dBm output Third order intercept (iP3) 25 dBm saturated output Power (Psat) 19 dBm supply Current (idd1 + idd2 + idd3) 220 ma [1] Unless otherwise indicated, all measurements are from probed die [2] adjust Vgg1 = Vgg2 = Vgg3 between -1V to +0.3V (typ -0.3V) to achieve iddtotal = 220ma Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd ho e ne r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o tniltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D