Datasheet HMC-APH196 (Analog Devices) - 4

HMC-APH196
v02.0209
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 17 - 30 GHz Pad Descriptions
Pad Number Function Description Interface Schematic This pad is AC coupled 1 RFIN and matched to 50 Ohms. Gate control for amplifi er. Please follow “MMIC Amplifi er Bias- 3 2, 4 Vgg1, Vgg2 ing Procedure” application note. See assembly for required external components. IP Power Supply Voltage for the amplifi er. See assembly for H 3, 5 Vdd1, Vdd2 required external components. This pad is AC coupled 6 RFOUT S - C and matched to 50 Ohms. R Die Bottom GND Die bottom must be connected to RF/DC ground. IE IF L P M R A E W O R & P A E IN L Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com
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