Datasheet HMC-AUH320 (Analog Devices)
| Hersteller | Analog Devices |
| Beschreibung | GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 -86 GHz |
| Seiten / Seite | 6 / 1 — HMC-AUH320. GaAs HEMT MMIC MEDIUM POWER. AMPLIFIER, 71 - 86 GHz. Typical … |
| Dateiformat / Größe | PDF / 357 Kb |
| Dokumentensprache | Englisch |
HMC-AUH320. GaAs HEMT MMIC MEDIUM POWER. AMPLIFIER, 71 - 86 GHz. Typical Applications. Features. Functional Diagram
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HMC-AUH320
v04.0412
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 86 GHz Typical Applications Features
This HmC-aUH320 is ideal for: Gain: 16 dB @ 74 GHz iP • Short Haul / High Capacity Links P1dB: +15 dBm H • Wireless LAN Bridges supply Voltage: +4V • Automotive Radar 50 ohm matched input/output s - C • Military & Space Die size: 2.20 x 0.87 x 0.1 mm r • E-Band Communication Systems ie Lif P
Functional Diagram General Description
m The HmC-aUH320 is a high dynamic range, four stage a Gaas HemT mmiC medium Power amplifier which r operates between 71 and 86 GHz. The HmC-aUH320 e provides 16 dB of gain at 74 GHz, and an output w power of +15 dBm at 1 dB compression from a +4V o supply voltage. All bond pads and the die backside are Ti/au metal ized and the amplifier device is ful y passivated for reliable operation. The HmC-aUH320 Gaas HemT mmiC medium Power amplifier is r & P compatible with conventional die attach methods, a as wel as thermocompression and thermosonic e wire bonding, making it ideal for MCM and hybrid microcircuit applications. al data shown herein is Lin measured with the chip in a 50 ohm environment and rf probes contacting the die pads.
Electrical Specifications, T = +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 130mA
[2]
A
Parameter min. Typ. max. Units frequency range 71 - 86 GHz Gain 10 16 dB input return Loss 4 dB output return Loss 6 dB output power for 1dB Compression (P1dB) 15 dBm saturated output Power (Psat) 16 dBm supply Current (idd1+idd2) 130 ma [1] Unless otherwise indicated, all measurements are from probed die [2] adjust Vgg between -0.8V to +0.3V (typ -0.1V) to achieve idd1 = 40ma, idd2 = 90ma or iddtotal = 130 ma. Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd ho e ne r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o tniltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D
v04.0412
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 86 GHz Typical Applications Features
This HmC-aUH320 is ideal for: Gain: 16 dB @ 74 GHz iP • Short Haul / High Capacity Links P1dB: +15 dBm H • Wireless LAN Bridges supply Voltage: +4V • Automotive Radar 50 ohm matched input/output s - C • Military & Space Die size: 2.20 x 0.87 x 0.1 mm r • E-Band Communication Systems ie Lif P
Functional Diagram General Description
m The HmC-aUH320 is a high dynamic range, four stage a Gaas HemT mmiC medium Power amplifier which r operates between 71 and 86 GHz. The HmC-aUH320 e provides 16 dB of gain at 74 GHz, and an output w power of +15 dBm at 1 dB compression from a +4V o supply voltage. All bond pads and the die backside are Ti/au metal ized and the amplifier device is ful y passivated for reliable operation. The HmC-aUH320 Gaas HemT mmiC medium Power amplifier is r & P compatible with conventional die attach methods, a as wel as thermocompression and thermosonic e wire bonding, making it ideal for MCM and hybrid microcircuit applications. al data shown herein is Lin measured with the chip in a 50 ohm environment and rf probes contacting the die pads.
Electrical Specifications, T = +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 130mA
[2]
A
Parameter min. Typ. max. Units frequency range 71 - 86 GHz Gain 10 16 dB input return Loss 4 dB output return Loss 6 dB output power for 1dB Compression (P1dB) 15 dBm saturated output Power (Psat) 16 dBm supply Current (idd1+idd2) 130 ma [1] Unless otherwise indicated, all measurements are from probed die [2] adjust Vgg between -0.8V to +0.3V (typ -0.1V) to achieve idd1 = 40ma, idd2 = 90ma or iddtotal = 130 ma. Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd ho e ne r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o tniltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D