Datasheet HMC1082LP4E (Analog Devices) - 8
| Hersteller | Analog Devices |
| Beschreibung | GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5.5 -18 GHz |
| Seiten / Seite | 10 / 8 — HMC1082LP4E. GaAs pHEMT MMIC MEDIUM. POWER AMPLIFIER, 5.5 - 18 GHz. Pin … |
| Dateiformat / Größe | PDF / 865 Kb |
| Dokumentensprache | Englisch |
HMC1082LP4E. GaAs pHEMT MMIC MEDIUM. POWER AMPLIFIER, 5.5 - 18 GHz. Pin Descriptions. 2.5k
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HMC1082LP4E
v05.1018
GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5.5 - 18 GHz Pin Descriptions
Pin Number Function Description Pin Schematic These pins are not connected internally, however all 1, 2, 5, 6, 7, 8, 10, 13, N/C data shown herein was measured with these pins T 14, 17, 18, 19, 21, 23 connected to RF/DC ground externally. M 3 RF IN This pin is DC coupled and matched to 50 Ohms. R - S E These pins and package bottom must be connected to 4, 15 GND W RF/DC ground. O Gate control for amplifier. External bypass capacitors 9 Vgg of 1000pF, 100pF and 2.2uF are required. R & P A E DC bias of diode biased through external resistor used IN 11 Vref for temperature compensation of Vdet. See application circuit. DC voltage representing RF output power rectified by S - L 12 Vdet diode which is biased through an external resistor. See application circuit. R IE RFOUT 16 RF OUT This pin is DC coupled and matched to 50 Ohms.
2.5k
Ω LIF P M A Drain bias voltage for amplifier. External bypass capac- 24, 22, 20 Vdd1, Vdd2, Vdd3 itors of 1000pF, 100pF and 2.2uF are required. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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v05.1018
GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5.5 - 18 GHz Pin Descriptions
Pin Number Function Description Pin Schematic These pins are not connected internally, however all 1, 2, 5, 6, 7, 8, 10, 13, N/C data shown herein was measured with these pins T 14, 17, 18, 19, 21, 23 connected to RF/DC ground externally. M 3 RF IN This pin is DC coupled and matched to 50 Ohms. R - S E These pins and package bottom must be connected to 4, 15 GND W RF/DC ground. O Gate control for amplifier. External bypass capacitors 9 Vgg of 1000pF, 100pF and 2.2uF are required. R & P A E DC bias of diode biased through external resistor used IN 11 Vref for temperature compensation of Vdet. See application circuit. DC voltage representing RF output power rectified by S - L 12 Vdet diode which is biased through an external resistor. See application circuit. R IE RFOUT 16 RF OUT This pin is DC coupled and matched to 50 Ohms.
2.5k
Ω LIF P M A Drain bias voltage for amplifier. External bypass capac- 24, 22, 20 Vdd1, Vdd2, Vdd3 itors of 1000pF, 100pF and 2.2uF are required. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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