Datasheet HMC5805ALS6 (Analog Devices) - 6
| Hersteller | Analog Devices |
| Beschreibung | GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER DC -40 GHz |
| Seiten / Seite | 10 / 6 — HMC5805ALS6. GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER. DC - 40 GHz. … |
| Dateiformat / Größe | PDF / 971 Kb |
| Dokumentensprache | Englisch |
HMC5805ALS6. GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER. DC - 40 GHz. Absolute Maximum Ratings. Typical Supply Current vs. Vdd
Modelllinie für dieses Datenblatt
Textversion des Dokuments
HMC5805ALS6
v02.0517
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER DC - 40 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) 12V Vdd (V) Idd (mA) Gate Bias Voltage (Vgg1) -3 to 0 Vdc +8 175 T For Vdd = 12V, Vgg2 = 5.5V +10 175 M Idd >145mA +11 175 For Vdd between 8.5V to 11V, Gate Bias Voltage (Vgg2) Note: Amplifier will operate over full voltage ranges shown Vgg2 = (Vdd - 6.5V) up to 4.5V above. Vgg adjusted to achieve Idd = 175 mA. For Vdd < 8.5V, R - S Vgg2 must remain > 2V E RF Input Power (RFIN) 22 dBm W Channel Temperature 175 °C O Continuous Pdiss (T= 85 °C) 2.89 W (derate 32.2 mW/°C above 85 °C) Thermal Resistance 31.1 °C/W ELECTROSTATIC SENSITIVE DEVICE (channel to ground paddle) OBSERVE HANDLING PRECAUTIONS R & P Storage Temperature -65 to 150 °C A Operating Temperature -40 to 85 °C E ESD Sensitivity (HBM) Class1B Passed 500V IN
Outline Drawing
S - L R IE LIF P M A
16-Terminal Ceramic Leadless Chip Carrier with Heat Sink [LCC_HS] Dimensions shown in millimeters. Table 1. Package Information
Part Number Package Body Material Lead Finish MSL Rating Package Option Package Marking [1] H5805A HMC5805ALS6 ALUMINA, WHITE Gold over Nickel MSL3 EP-16-2 XXXX H5805A HMC5805ALS6TR ALUMINA, WHITE Gold over Nickel MSL3 EP-16-2 XXXX [1] 4-Digit lot number XXXX For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
6
Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Typical Performance Characteristics Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature P1dB vs. Temperature Psat vs. Temperature Psat vs. Supply Voltage P1dB vs. Supply Current Psat vs. Supply Current Output IP3 vs. Temperature @ Pout = 14 dBm / Tone Output IP3 vs. Supply Voltage @ Pout = 14 dBm / Tone Output IP3 vs. Supply Currents @ Pout = 14 dBm / Tone Output IM3 @ Vdd = +10V Output IM3 @ Vdd = +11V Reverse Isolation vs. Temperature Power Compression @ 20 GHz Absolute Maximum Ratings Outline Drawing Pad Descriptions Application Circuit
v02.0517
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER DC - 40 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) 12V Vdd (V) Idd (mA) Gate Bias Voltage (Vgg1) -3 to 0 Vdc +8 175 T For Vdd = 12V, Vgg2 = 5.5V +10 175 M Idd >145mA +11 175 For Vdd between 8.5V to 11V, Gate Bias Voltage (Vgg2) Note: Amplifier will operate over full voltage ranges shown Vgg2 = (Vdd - 6.5V) up to 4.5V above. Vgg adjusted to achieve Idd = 175 mA. For Vdd < 8.5V, R - S Vgg2 must remain > 2V E RF Input Power (RFIN) 22 dBm W Channel Temperature 175 °C O Continuous Pdiss (T= 85 °C) 2.89 W (derate 32.2 mW/°C above 85 °C) Thermal Resistance 31.1 °C/W ELECTROSTATIC SENSITIVE DEVICE (channel to ground paddle) OBSERVE HANDLING PRECAUTIONS R & P Storage Temperature -65 to 150 °C A Operating Temperature -40 to 85 °C E ESD Sensitivity (HBM) Class1B Passed 500V IN
Outline Drawing
S - L R IE LIF P M A
16-Terminal Ceramic Leadless Chip Carrier with Heat Sink [LCC_HS] Dimensions shown in millimeters. Table 1. Package Information
Part Number Package Body Material Lead Finish MSL Rating Package Option Package Marking [1] H5805A HMC5805ALS6 ALUMINA, WHITE Gold over Nickel MSL3 EP-16-2 XXXX H5805A HMC5805ALS6TR ALUMINA, WHITE Gold over Nickel MSL3 EP-16-2 XXXX [1] 4-Digit lot number XXXX For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
6
Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Typical Performance Characteristics Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature P1dB vs. Temperature Psat vs. Temperature Psat vs. Supply Voltage P1dB vs. Supply Current Psat vs. Supply Current Output IP3 vs. Temperature @ Pout = 14 dBm / Tone Output IP3 vs. Supply Voltage @ Pout = 14 dBm / Tone Output IP3 vs. Supply Currents @ Pout = 14 dBm / Tone Output IM3 @ Vdd = +10V Output IM3 @ Vdd = +11V Reverse Isolation vs. Temperature Power Compression @ 20 GHz Absolute Maximum Ratings Outline Drawing Pad Descriptions Application Circuit