Datasheet HMC1022ACHIPS (Analog Devices) - 5

Data Sheet HMC1022ACHIPS ABSOLUTE MAXIMUM RATINGS Table 4. THERMAL RESISTANCE Parameter Rating
Thermal performance is directly linked to system design and VDD 11.0 V operating environment. Careful attention to printed circuit Gate Bias board (PCB) thermal design is required. VGG1 −3.0 V to 0 V θJC is the channel to case thermal resistance, channel to bottom VGG2 2.5 V to (VDD − 5.5 V) of die. Radio Frequency Input Power (RFIN) 22 dBm Continuous Power Dissipation (PDISS), 2.69 W
Table 5. Thermal Resistance
T = 85°C (Derate 29.9 mW/°C Above 85°C)
Package Type θJC Unit
Storage Temperature Range −65°C to +150°C C-8-19 33.5 °C/W Operating Temperature Range −55°C to +85°C Electrostatic Discharge (ESD) Sensitivity
Table 6. Reliability Information
Human Body Model (HBM) Class 1A (passed
Parameter Temperature (°C)
250 V) Junction Temperature to Maintain 175 Stresses at or above those listed under Absolute Maximum 1,000,000 Hour Mean Time to Failure (MTTF) Ratings may cause permanent damage to the product. This is a Nominal Junction Temperature (T = 85°C, 135.25 V stress rating only; functional operation of the product at these DD = 10 V, IDQ = 150 mA) or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond
ESD CAUTION
the maximum operating conditions for extended periods may affect product reliability. Rev. 0 | Page 5 of 17 Document Outline Features Applications Functional Block Diagram General Description Revision History Electrical Specifications DC to 30 GHz Frequency Range 30 GHz to 40 GHz Frequency Range 40 GHz to 48 GHz Frequency Range Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Mounting and Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Mounting Wire Bonding Outline Dimensions Ordering Guide