Datasheet BDW42G (NPN), BDW46G, BDW47G (PNP) (ON Semiconductor) - 6
Hersteller | ON Semiconductor |
Beschreibung | Darlington Complementary Silicon Power Transistors |
Seiten / Seite | 8 / 6 — BDW42G (NPN), BDW46G, BDW47G (PNP). BDW42 (NPN). BDW46, 47 (PNP). Figure … |
Revision | 17 |
Dateiformat / Größe | PDF / 239 Kb |
Dokumentensprache | Englisch |
BDW42G (NPN), BDW46G, BDW47G (PNP). BDW42 (NPN). BDW46, 47 (PNP). Figure 12. Temperature Coefficients
Modelllinie für dieses Datenblatt
Textversion des Dokuments
BDW42G (NPN), BDW46G, BDW47G (PNP) BDW42 (NPN) BDW46, 47 (PNP)
+5.0 +5.0 C) ° C) ° +4.0 +4.0 *IC/IB v 250 *IC/IB v 250 (mV/ +3.0 +3.0 + 25°C to 150°C +2.0 25°C to 150°C +2.0 +1.0 +1.0 -55°C to 25°C COEFFICIENT 0 0 -1.0 *q -1.0 TURE VC for VCE(sat) *q TURE COEFFICIENTS (mV/ VC for VCE(sat) -2.0 -2.0 25°C to 150°C q -55°C to + 25°C VB for VBE -3.0 q -3.0 + 25 -55 °C to 150°C °C to +25°C VB for VBE , TEMPERA V -55 -4.0 °C to 25°C θ , TEMPERA V -4.0 θ -5.0 -5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 12. Temperature Coefficients
105 105 REVERSE FORWARD REVERSE FORWARD 104 104 μ μ (A) V (A) CE = 30 V VCE = 30 V 103 103 102 102 OR CURRENT OR CURRENT T T J = 150°C J = 150°C 101 101 , COLLECT 100°C , COLLECT I C 100 I C 100 100°C 25°C 25°C 10-1 10-1 +0.6 +0.4 +0.2 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 + 1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 13. Collector Cut−Off Region
NPN COLLECTOR PNP COLLECTOR BDW42 BDW46 BDW47 BASE BASE [ 8.0 k [ 60 [ 8.0 k [ 60 EMITTER EMITTER
Figure 14. Darlington Schematic www.onsemi.com 6