Datasheet BDW42G (NPN), BDW46G, BDW47G (PNP) (ON Semiconductor) - 3
| Hersteller | ON Semiconductor |
| Beschreibung | Darlington Complementary Silicon Power Transistors |
| Seiten / Seite | 8 / 3 — BDW42G (NPN), BDW46G, BDW47G (PNP). Figure 1. Power Temperature Derating … |
| Revision | 17 |
| Dateiformat / Größe | PDF / 239 Kb |
| Dokumentensprache | Englisch |
BDW42G (NPN), BDW46G, BDW47G (PNP). Figure 1. Power Temperature Derating Curve. Figure 2. Switching Times Test Circuit
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BDW42G (NPN), BDW46G, BDW47G (PNP)
90 80 TTS) 70 A 60 TION (W A 50 40 30 20 , POWER DISSIP DP 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve
5.0 VCC t BDW46, 47 (PNP) RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 3.0 s - 30 V BDW42 (NPN) D1 MUST BE FAST RECOVERY TYPES, e.g.: 2.0 1N5825 USED ABOVE IB [ 100 mA RC MSD6100 USED BELOW IB [ 100 mA t SCOPE f 1.0 TUT (s)μ 0.7 V R 2 B 0.5 APPROX t, TIME + 8.0 V 0.3 51 D1 t [ 8.0 k [ 150 r 0 0.2 VCC = 30 V V + 4.0 V I 1 C/IB = 250 0.1 I APPROX B1 = IB2 25 ms for td and tr, D1 id disconnected 0.07 - 12 V T t J = 25°C d @ VBE(off) = 0 V and V2 = 0 0.05 tr, tf v 10 ns 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 For NPN test circuit reverse all polarities DUTY CYCLE = 1.0% IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times Test Circuit Figure 3. Switching Times
1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 TRANSIENT 0.1 ANCE (NORMALIZED) P(pk) 0.1 0.05 RqJC(t) = r(t) RqJC 0.07 0.02 RqJC = 1.92°C/W RESIST 0.05 D CURVES APPLY FOR POWER r(t) EFFECTIVE t1 PULSE TRAIN SHOWN 0.03 t2 SINGLE PULSE READ TIME AT t1 0.02 0.01 THERMAL T DUTY CYCLE, D = t J(pk) - TC = P(pk) RqJC(t) 1/t2 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response www.onsemi.com 3
90 80 TTS) 70 A 60 TION (W A 50 40 30 20 , POWER DISSIP DP 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve
5.0 VCC t BDW46, 47 (PNP) RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 3.0 s - 30 V BDW42 (NPN) D1 MUST BE FAST RECOVERY TYPES, e.g.: 2.0 1N5825 USED ABOVE IB [ 100 mA RC MSD6100 USED BELOW IB [ 100 mA t SCOPE f 1.0 TUT (s)μ 0.7 V R 2 B 0.5 APPROX t, TIME + 8.0 V 0.3 51 D1 t [ 8.0 k [ 150 r 0 0.2 VCC = 30 V V + 4.0 V I 1 C/IB = 250 0.1 I APPROX B1 = IB2 25 ms for td and tr, D1 id disconnected 0.07 - 12 V T t J = 25°C d @ VBE(off) = 0 V and V2 = 0 0.05 tr, tf v 10 ns 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 For NPN test circuit reverse all polarities DUTY CYCLE = 1.0% IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times Test Circuit Figure 3. Switching Times
1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 TRANSIENT 0.1 ANCE (NORMALIZED) P(pk) 0.1 0.05 RqJC(t) = r(t) RqJC 0.07 0.02 RqJC = 1.92°C/W RESIST 0.05 D CURVES APPLY FOR POWER r(t) EFFECTIVE t1 PULSE TRAIN SHOWN 0.03 t2 SINGLE PULSE READ TIME AT t1 0.02 0.01 THERMAL T DUTY CYCLE, D = t J(pk) - TC = P(pk) RqJC(t) 1/t2 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response www.onsemi.com 3