Datasheet NVBG015N065SC1 (ON Semiconductor) - 2

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NVBG015N065SC1 THERMAL CHARACTERISTICS Parameter Symbol Max Units
Thermal Resistance Junction−to−Case (Note 2) RθJC 0.3 °C/W Thermal Resistance Junction−to−Ambient (Notes 1, 2) RθJA 40 °C/W
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise stated)
Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA 650 V Drain−to−Source Breakdown Voltage V(BR)DSS/TJ ID = 20 mA, refer to 25°C 0.12 V/°C Temperature Coefficient Zero Gate Voltage Drain Current IDSS VGS = 0 V TJ = 25°C 10 mA VDS = 650 V TJ = 175°C 1 mA Gate−to−Source Leakage Current IGSS VGS = +18/−5 V, VDS = 0 V 250 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VGS = VDS , ID = 25 mA 1.8 2.8 4.3 V Recommended Gate Voltage VGOP −5 +18 V Drain−to−Source On Resistance RDS(on) VGS = 15 V, ID = 75 A, TJ = 25°C 15 mW VGS = 18 V, ID = 75 A, TJ = 25°C 12 18 VGS = 18 V, ID = 75 A, TJ = 175°C 16 Forward Transconductance gFS VDS = 10 V, ID = 75 A 42 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance CISS VGS = 0 V, f = 1 MHz, 4689 pF VDS = 325 V Output Capacitance COSS 424 Reverse Transfer Capacitance CRSS 37 Total Gate Charge QG(TOT) VGS = −5/18 V, VDS = 520 V, 283 nC ID = 75 A Gate−to−Source Charge QGS 72 Gate−to−Drain Charge QGD 64 Gate−Resistance R f = 1 MHz 1.6 G W
SWITCHING CHARACTERISTICS
Turn−On Delay Time td(ON) VGS = −5/18 V, VDS = 400 V, 23 ns ID = 75 A, RG = 2.2 W, Rise Time tr Inductive Load 26 Turn−Off Delay Time td(OFF) 49 Fall Time tf 9.6 Turn−On Switching Loss EON 167 mJ Turn−Off Switching Loss EOFF 276 Total Switching Loss ETOT 443
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−Source Diode Forward ISD VGS = −5 V, TJ = 25°C 111 A Current Pulsed Drain−Source Diode Forward Current ISDM VGS = −5 V, TJ = 25°C 422 A (Note 3) Forward Diode Voltage VSD VGS = −5 V, ISD = 75 A, TJ = 25°C 4.8 V
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