Datasheet 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007 (ON Semiconductor) - 2

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1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007 MAXIMUM RATINGS Rating Symbol 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Unit
†Peak Repetitive Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR †Non−Repetitive Peak Reverse Voltage VRSM 60 120 240 480 720 1000 1200 V (halfwave, single phase, 60 Hz) †RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V †Average Rectified Forward Current IO 1.0 A (single phase, resistive load, 60 Hz, TA = 75°C) †Non−Repetitive Peak Surge Current IFSM 30 (for 1 cycle) A (surge applied at rated load conditions) Operating and Storage Junction TJ −65 to +175 °C Temperature Range Tstg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. †Indicates JEDEC Registered Data
THERMAL CHARACTERISTICS Rating Symbol Max Unit
Maximum Thermal Resistance, Junction−to−Ambient RqJA Note 1 °C/W
ELECTRICAL CHARACTERISTICS
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Rating Symbol Typ Max Unit
Maximum Instantaneous Forward Voltage Drop, (iF = 1.0 Amp, TJ = 25°C) vF 0.93 1.1 V Maximum Full−Cycle Average Forward Voltage Drop, (IO = 1.0 Amp, TL = 75°C, 1 inch leads) VF(AV) − 0.8 V Maximum Reverse Current (rated DC voltage) IR mA (TJ = 25°C) 0.05 10 (TJ = 100°C) 1.0 50 Maximum Full−Cycle Average Reverse Current, (IO = 1.0 Amp, TL = 75°C, 1 inch leads) IR(AV) − 30 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. †Indicates JEDEC Registered Data
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