Datasheet MTP2N50E (Motorola) - 7
Hersteller | Motorola |
Beschreibung | TMOS E-FET Power Field Effect Transistor - N-Channel Enhancement-Mode Silicon Gate |
Seiten / Seite | 8 / 7 — PACKAGE DIMENSIONS. SEATING. –T– PLANE. INCHES. MILLIMETERS. DIM. MIN. … |
Dateiformat / Größe | PDF / 253 Kb |
Dokumentensprache | Englisch |
PACKAGE DIMENSIONS. SEATING. –T– PLANE. INCHES. MILLIMETERS. DIM. MIN. MAX. 2 3. CASE 221A–06. ISSUE Y
Modelllinie für dieses Datenblatt
Textversion des Dokuments
MTP2N50E
PACKAGE DIMENSIONS
NOTES:
SEATING
1. DIMENSIONING AND TOLERANCING PER ANSI
–T– PLANE
Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
B F C
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S
BODY AND LEAD IRREGULARITIES ARE ALLOWED.
4 INCHES MILLIMETERS DIM MIN MAX MIN MAX Q A A
0.570 0.620 14.48 15.75
B
0.380 0.405 9.66 10.28
1 2 3 U C
0.160 0.190 4.07 4.82 STYLE 5:
H
PIN 1. GATE
D
0.025 0.035 0.64 0.88 2. DRAIN
F
0.142 0.147 3.61 3.73
K
3. SOURCE
G
0.095 0.105 2.42 2.66 4. DRAIN
H
0.110 0.155 2.80 3.93
Z J
0.018 0.025 0.46 0.64
K
0.500 0.562 12.70 14.27
L
0.045 0.060 1.15 1.52
L R N
0.190 0.210 4.83 5.33
Q
0.100 0.120 2.54 3.04
V J R
0.080 0.110 2.04 2.79
S
0.045 0.055 1.15 1.39
G T
0.235 0.255 5.97 6.47
D U
0.000 0.050 0.00 1.27
V
0.045 ––– 1.15 –––
N CASE 221A–06 Z
––– 0.080 ––– 2.04
ISSUE Y
Motorola TMOS Power MOSFET Transistor Device Data 7