Datasheet MTP2N50E (Motorola) - 2
| Hersteller | Motorola |
| Beschreibung | TMOS E-FET Power Field Effect Transistor - N-Channel Enhancement-Mode Silicon Gate |
| Seiten / Seite | 8 / 2 — ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. … |
| Dateiformat / Größe | PDF / 253 Kb |
| Dokumentensprache | Englisch |
ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS (1)
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MTP2N50E
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain–Source Breakdown Voltage V(BR)DSS (VGS = 0 Vdc, ID = 250 µAdc) 500 — — Vdc Temperature Coefficient (Positive) — 689 — mV/°C Zero Gate Voltage Drain Current IDSS µAdc (VDS = 500 Vdc, VGS = 0 Vdc) — — 10 (VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C) — — 100 Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS — — 100 nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage VGS(th) (VDS = VGS, ID = 250 µAdc) 2.0 3.0 4.0 Vdc Temperature Coefficient (Negative) — 7.1 — mV/°C Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 1.0 Adc) RDS(on) — 2.7 4.0 Ohm Drain–Source On–Voltage (VGS = 10 Vdc) VDS(on) Vdc (ID = 2.0 Adc) — 5.9 9.6 (ID = 1.0 Adc, TJ = 125°C) — — 8.4 Forward Transconductance (VDS = 15 Vdc, ID = 1.0 Adc) gFS 1.0 1.6 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss — 323 450 pF (VD (V S = 25 Vdc, V S G = 25 Vdc, V S = 0 Vdc, Output Capacitance S C f = 1.0 MHz) oss — 45 60 f = 1.0 MHz) Reverse Transfer Capacitance Crss — 9.0 20
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time td(on) — 8.0 16 ns (V Rise Time D (V D = 250 Vdc, I D D = 250 Vdc, I = 2.0 Adc, D tr — 6.0 12 VG V S = 10 Vdc, S Turn–Off Delay Time RG = 9.1 G Ω = 9.1 ) Ω t Ω) d(off) — 16 32 Fall Time tf — 10 20 Gate Charge QT — 11 15 nC (See Figure 8) (V Q D (V S = 400 Vdc, I S D = 400 Vdc, I = 2.0 Adc, D 1 — 2.0 — (VDS = 400 Vdc, ID = 2.0 Adc, VG V S = 10 Vdc) S Q2 — 5.4 — Q3 — 5.1 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1) V Vdc (I SD S = 2.0 Adc, VGS = 0 Vdc) — 0.82 1.6 (IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C) — 0.69 — Reverse Recovery Time trr — 334 — ns (See Figure 14) (I t S (I = 2.0 Adc, V S G = 2.0 Adc, V S = 0 Vdc, S a — 62 — (IS = 2.0 Adc, VGS = 0 Vdc, dIS dI /dt = 100 A/ S µ /dt = 100 A/ s) µ tb — 272 — Reverse Recovery Stored Charge QRR — 0.985 — µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance LD — 4.5 — nH (Measured from the drain lead 0.25″ from package to center of die) Internal Source Inductance LS — 7.5 — nH (Measured from the source lead 0.25″ from package to source bond pad) (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. 2 Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain–Source Breakdown Voltage V(BR)DSS (VGS = 0 Vdc, ID = 250 µAdc) 500 — — Vdc Temperature Coefficient (Positive) — 689 — mV/°C Zero Gate Voltage Drain Current IDSS µAdc (VDS = 500 Vdc, VGS = 0 Vdc) — — 10 (VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C) — — 100 Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS — — 100 nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage VGS(th) (VDS = VGS, ID = 250 µAdc) 2.0 3.0 4.0 Vdc Temperature Coefficient (Negative) — 7.1 — mV/°C Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 1.0 Adc) RDS(on) — 2.7 4.0 Ohm Drain–Source On–Voltage (VGS = 10 Vdc) VDS(on) Vdc (ID = 2.0 Adc) — 5.9 9.6 (ID = 1.0 Adc, TJ = 125°C) — — 8.4 Forward Transconductance (VDS = 15 Vdc, ID = 1.0 Adc) gFS 1.0 1.6 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss — 323 450 pF (VD (V S = 25 Vdc, V S G = 25 Vdc, V S = 0 Vdc, Output Capacitance S C f = 1.0 MHz) oss — 45 60 f = 1.0 MHz) Reverse Transfer Capacitance Crss — 9.0 20
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time td(on) — 8.0 16 ns (V Rise Time D (V D = 250 Vdc, I D D = 250 Vdc, I = 2.0 Adc, D tr — 6.0 12 VG V S = 10 Vdc, S Turn–Off Delay Time RG = 9.1 G Ω = 9.1 ) Ω t Ω) d(off) — 16 32 Fall Time tf — 10 20 Gate Charge QT — 11 15 nC (See Figure 8) (V Q D (V S = 400 Vdc, I S D = 400 Vdc, I = 2.0 Adc, D 1 — 2.0 — (VDS = 400 Vdc, ID = 2.0 Adc, VG V S = 10 Vdc) S Q2 — 5.4 — Q3 — 5.1 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1) V Vdc (I SD S = 2.0 Adc, VGS = 0 Vdc) — 0.82 1.6 (IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C) — 0.69 — Reverse Recovery Time trr — 334 — ns (See Figure 14) (I t S (I = 2.0 Adc, V S G = 2.0 Adc, V S = 0 Vdc, S a — 62 — (IS = 2.0 Adc, VGS = 0 Vdc, dIS dI /dt = 100 A/ S µ /dt = 100 A/ s) µ tb — 272 — Reverse Recovery Stored Charge QRR — 0.985 — µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance LD — 4.5 — nH (Measured from the drain lead 0.25″ from package to center of die) Internal Source Inductance LS — 7.5 — nH (Measured from the source lead 0.25″ from package to source bond pad) (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. 2 Motorola TMOS Power MOSFET Transistor Device Data