Datasheet TLP241B, TLP241BF (Toshiba) - 3

TLP241B,TLP241BF 8. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Note Rating Unit LED Input forward current IF 30 mA Input forward current derating (Ta ≥ 25 �) ∆IF/∆Ta -0.3 mA/� Input forward current (pulsed) (100 µs pulse, 100 pps) IFP 1 A Input reverse voltage VR 6 V Input power dissipation PD 50 mW Input power dissipation derating (Ta ≥ 25 �) ∆PD/∆Ta -0.5 mW/� Junction temperature Tj 125 � Detector OFF-state output terminal voltage VOFF 100 V ON-state current ION 2.0 A ON-state current derating (Ta ≥ 25 �) ∆ION/∆Ta -20 mA/� ON-state current (pulsed) (t = 100 ms, Duty = 1/10) IONP 6.0 A Output power dissipation PO 550 mW Output power dissipation derating (Ta ≥ 25 �) ∆PO/∆Ta -5.5 mW/� Junction temperature Tj 125 � Common Storage temperature Tstg -55 to 125 � Operating temperature Topr -40 to 110 � Lead soldering temperature (10 s) Tsol 260 � Isolation voltage AC, 60 s, R.H. ≤ 60 % BVS (Note 1) 5000 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together. 9. Recommended Operating Conditions (Note) Characteristics Symbol Note Min Typ. Max Unit Supply voltage VDD � � 80 V Input forward current IF 5 10 25 mA ON-state current ION � � 2.0 A Operating temperature Topr -20 � 85 � Note: The recommended operating conditions are given as a design guide necessary to obtain the intended performance of the device. Each parameter is an independent value. When creating a system design using this device, the electrical characteristics specified in this data sheet should also be considered. 10. Electrical Characteristics (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Note Test Condition Min Typ. Max Unit LED Input forward voltage VF IF = 10 mA 1.50 1.65 1.80 V Input reverse current IR VR = 5 V � � 10 µA Input capacitance Ct V = 0 V, f = 1 MHz � 50 � pF Detector OFF-state current IOFF VOFF = 100 V � 0.01 1 µA Output capacitance COFF V = 0 V, f = 1 MHz � 300 � pF ©2020 3 2020-12-02 Toshiba Electronic Devices & Storage Corporation Rev.1.0