Datasheet TCKE712BNL (Toshiba) - 2

TCKE712BNL
Absolute Maximum Ratings (Ta = 25 °C)
Characteristics Symbol Rating Unit Input voltage VIN -0.3 to 18 V ILIM voltage VILIM -0.3 to 6 V dV/dT voltage VdV/dT -0.3 to 6 V OVP voltage VOVP -0.3 to 6 V Control voltage VEN -0.3 to 18 V Output voltage VOUT -0.3 to 18 V FLAG voltage VFLAG -0.3 to 18 V FLAG Sink current ISINK_FLAG 0 to 1 mA Power dissipation PD 2.4 (Note 1) W Junction temperature Tj 150 °C Storage temperature Tstg − 55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board: FR4 board. (76.2 mm × 114.3 mm × 1.6 mm, 4 layer )
Operating Ranges
Characteristics Symbol Ranges Unit Input voltage VIN 4.4 to 13.2 V 4.4 V ≤ VIN ≤ 5.5 V 1.7 to 12 ILIM External resistance RILIM 5.5 V < VIN ≤ 9.9 V 2.4 to 12 kΩ 9.9 V < VIN ≤ 13.2 V 3.1 to 12 Control voltage VEN 0 to 18 V FLAG Voltage VFLAG 0 to 18 V FLAG Sink current ISINK_FLAG 0 to 1 mA Operating Ambient Ta_ temperature range opr −40 to 85 °C External capacitance CdV/dT 1000(max) nF © 2020 2 2020-12-14 Toshiba Electronic Devices & Storage Corporation