Datasheet IRF7822PBF (International Rectifier)
| Hersteller | International Rectifier |
| Beschreibung | HEXFET Power MOSFET for DC-DC Converters |
| Seiten / Seite | 6 / 1 — HEXFET® Power MOSFET for DC-DC Converters. Description. IRF7822. Absolute … |
| Dateiformat / Größe | PDF / 147 Kb |
| Dokumentensprache | Englisch |
HEXFET® Power MOSFET for DC-DC Converters. Description. IRF7822. Absolute Maximum Ratings. Parameter. Symbol. Units
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Textversion des Dokuments
PD - 95024 IRF7822PbF
HEXFET® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs • Ideal for CPU Core DC-DC Converters • Low Conduction Losses A 1 • Low Switching Losses 8 S D • Lead-Free 2 7 S D 3 6 S D
Description
4 5 G D This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced SO-8 T op V iew conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. DEVICE CHARACTERISTICS The IRF7822 has been optimized for all parameters that
IRF7822
are critical in synchronous buck converters including R , gate charge and Cdv/dt-induced turn-on immunity. R 5.0mΩ DS(on) DS(on) The IRF7822 offers particulary low R and high Cdv/ DS(on) Q 44nC G dt immunity for synchronous FET applications. Q 12nC sw The package is designed for vapor phase, infra-red, Q 27nC oss convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application.
Absolute Maximum Ratings Parameter Symbol IRF7822 Units
Drain-Source Voltage V 30 V DS Gate-Source Voltage V ±12 GS Continuous Drain or Source T = 25°C I 18 A D Current (V ≥ 4.5V) T = 70°C 13 A GS A Pulsed Drain Current I 150 DM Power Dissipation T = 25°C P 3.1 W A D T = 70°C 3.0 A Junction & Storage Temperature Range T ,T –55 to 150 °C J STG Continuous Source Current (Body Diode) I 3.8 A S Pulsed Source Current I 150 SM
Thermal Resistance Parameter Max. Units
Maximum Junction-to-Ambient R 40 °C/W θJA Maximum Junction-to-Lead R 20 °C/W θJL www.irf.com 1 9/30/04
HEXFET® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs • Ideal for CPU Core DC-DC Converters • Low Conduction Losses A 1 • Low Switching Losses 8 S D • Lead-Free 2 7 S D 3 6 S D
Description
4 5 G D This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced SO-8 T op V iew conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. DEVICE CHARACTERISTICS The IRF7822 has been optimized for all parameters that
IRF7822
are critical in synchronous buck converters including R , gate charge and Cdv/dt-induced turn-on immunity. R 5.0mΩ DS(on) DS(on) The IRF7822 offers particulary low R and high Cdv/ DS(on) Q 44nC G dt immunity for synchronous FET applications. Q 12nC sw The package is designed for vapor phase, infra-red, Q 27nC oss convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application.
Absolute Maximum Ratings Parameter Symbol IRF7822 Units
Drain-Source Voltage V 30 V DS Gate-Source Voltage V ±12 GS Continuous Drain or Source T = 25°C I 18 A D Current (V ≥ 4.5V) T = 70°C 13 A GS A Pulsed Drain Current I 150 DM Power Dissipation T = 25°C P 3.1 W A D T = 70°C 3.0 A Junction & Storage Temperature Range T ,T –55 to 150 °C J STG Continuous Source Current (Body Diode) I 3.8 A S Pulsed Source Current I 150 SM
Thermal Resistance Parameter Max. Units
Maximum Junction-to-Ambient R 40 °C/W θJA Maximum Junction-to-Lead R 20 °C/W θJL www.irf.com 1 9/30/04