Datasheet IRF7822 (International Rectifier) - 4
| Hersteller | International Rectifier |
| Beschreibung | HEXFET Power MOSFET for DC-DC Converters |
| Seiten / Seite | 6 / 4 — Fig 5. Fig 6 |
| Dateiformat / Größe | PDF / 73 Kb |
| Dokumentensprache | Englisch |
Fig 5. Fig 6
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IRF7822 100.00 100 ) TJ = 175°C (Α T = 150 C ° J 10 10.00 T = 25 C ° J TJ = 25°C 1 , Drain-to-Source Current I D I , Reverse Drain Current (A) SD VDS = 15V 20µs PULSE WIDTH 1.00 V = 0 V GS 0.1 1.0 2.0 3.0 4.0 5.0 0.2 0.5 0.7 1.0 1.2 V ,Source-to-Drain Voltage (V) SD VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
Fig 6.
Typical Source-Drain Diode Forward Voltage 100 D = 0.50 10 thJA 0.20 (Z ) 0.10 0.05 1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Thermal Response P DM t 1 0.1 t 2 Notes: 1. Duty factor D = t / t 1 2 2. Peak T = P x Z + T J DM thJA A 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Rectangular Pulse Duration (sec) 1 Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com
Fig 5.
Typical Transfer Characteristics
Fig 6.
Typical Source-Drain Diode Forward Voltage 100 D = 0.50 10 thJA 0.20 (Z ) 0.10 0.05 1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Thermal Response P DM t 1 0.1 t 2 Notes: 1. Duty factor D = t / t 1 2 2. Peak T = P x Z + T J DM thJA A 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Rectangular Pulse Duration (sec) 1 Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com