Datasheet IRFP450, SiHFP450 (Vishay) - 2
| Hersteller | Vishay |
| Beschreibung | Power MOSFET |
| Seiten / Seite | 11 / 2 — IRFP450, SiHFP450. THERMAL RESISTANCE RATINGS. PARAMETER SYMBOL. TYP. … |
| Dateiformat / Größe | PDF / 1.6 Mb |
| Dokumentensprache | Englisch |
IRFP450, SiHFP450. THERMAL RESISTANCE RATINGS. PARAMETER SYMBOL. TYP. MAX. UNIT. SPECIFICATIONS. TEST. CONDITIONS. MIN. Static. Dynamic
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Textversion des Dokuments
IRFP450, SiHFP450
Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - °C/W Maximum Junction-to-Case (Drain) RthJC - 0.65
SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 500 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.63 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 500 V, VGS = 0 V - - 25 Zero Gate Voltage Drain Current IDSS µA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 8.4 Ab - - 0.40 Ω Forward Transconductance gfs VDS = 50 V, ID = 8.4 Ab 9.3 - - S
Dynamic
Input Capacitance Ciss - 2600 - VGS = 0 V, Output Capacitance Coss VDS = 25 V, - 720 - pF f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss - 340 - Total Gate Charge Qg - - 150 I Gate-Source Charge Qgs V D = 14 A, VDS = 400 V, GS = 10 V - - 20 nC see fig. 6 and 13b Gate-Drain Charge Qgd - - 80 Turn-On Delay Time td(on) - 17 - Rise Time tr - 47 - VDD = 250 V, ID = 14 A, ns Turn-Off Delay Time t R d(off) G = 6.2 Ω, RD = 17 Ω, see fig. 10b - 92 - Fall Time tf - 44 - D Internal Drain Inductance L Between lead, D - 5.0 - 6 mm (0.25") from package and center of nH G Internal Source Inductance LS die contact - 13 - S
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous Source-Drain Diode Current I D S - - 14 showing the integral reverse A G Pulsed Diode Forward Currenta ISM p - n junction diode - - 56 S Body Diode Voltage VSD TJ = 25 °C, IS = 14 A, VGS = 0 Vb - - 1.4 V Body Diode Reverse Recovery Time trr - 540 810 ns TJ = 25 °C, IF = 14 A, dI/dt = 100 A/µsb Body Diode Reverse Recovery Charge Qrr - 4.8 7.2 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com Document Number: 91233 2 S-81271-Rev. A, 16-Jun-08
Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - °C/W Maximum Junction-to-Case (Drain) RthJC - 0.65
SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 500 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.63 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 500 V, VGS = 0 V - - 25 Zero Gate Voltage Drain Current IDSS µA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 8.4 Ab - - 0.40 Ω Forward Transconductance gfs VDS = 50 V, ID = 8.4 Ab 9.3 - - S
Dynamic
Input Capacitance Ciss - 2600 - VGS = 0 V, Output Capacitance Coss VDS = 25 V, - 720 - pF f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss - 340 - Total Gate Charge Qg - - 150 I Gate-Source Charge Qgs V D = 14 A, VDS = 400 V, GS = 10 V - - 20 nC see fig. 6 and 13b Gate-Drain Charge Qgd - - 80 Turn-On Delay Time td(on) - 17 - Rise Time tr - 47 - VDD = 250 V, ID = 14 A, ns Turn-Off Delay Time t R d(off) G = 6.2 Ω, RD = 17 Ω, see fig. 10b - 92 - Fall Time tf - 44 - D Internal Drain Inductance L Between lead, D - 5.0 - 6 mm (0.25") from package and center of nH G Internal Source Inductance LS die contact - 13 - S
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous Source-Drain Diode Current I D S - - 14 showing the integral reverse A G Pulsed Diode Forward Currenta ISM p - n junction diode - - 56 S Body Diode Voltage VSD TJ = 25 °C, IS = 14 A, VGS = 0 Vb - - 1.4 V Body Diode Reverse Recovery Time trr - 540 810 ns TJ = 25 °C, IF = 14 A, dI/dt = 100 A/µsb Body Diode Reverse Recovery Charge Qrr - 4.8 7.2 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com Document Number: 91233 2 S-81271-Rev. A, 16-Jun-08