BYV28-50, BYV28-100, BYV28-150, BYV28-200 www.vishay.com Vishay Semiconductors 60 250 V = V f = 1 MHz R RRM 50 200 ipation (mW) 40 P - Limit ss R at 100 % V 150 R 30 100 e Power Di 20 s P - Limit R at 80 % VR - Diode Capacitance (pF) 50 10 DC - Rever R P 0 0 25 50 75 100 125 150 175 0.1 1 10 100 16456 T 16457 j - Junction Temperature (°C) VR - Reverse Voltage (V) Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): SOD-64 Sintered Glass Case Cathode Identification 4.3 (0.168) max. SOD-64 1.35 (0.053) max. 26(1.014) min. 4 (0.156) max. 26 (1.014) min. Document-No.: 6.563-5006.4-4 Rev. 3 - Date: 09.February.2005 94 9587 Rev. 1.9. 21-Feb-18 3 Document Number: 86044 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000