Datasheet IRFP9240, SiHFP9240 (Vishay)
| Hersteller | Vishay |
| Beschreibung | Power MOSFET |
| Seiten / Seite | 11 / 1 — IRFP9240, SiHFP9240. Power MOSFET. FEATURES. PRODUCT SUMMARY. RoHS*. … |
| Dateiformat / Größe | PDF / 1.9 Mb |
| Dokumentensprache | Englisch |
IRFP9240, SiHFP9240. Power MOSFET. FEATURES. PRODUCT SUMMARY. RoHS*. COMPLIANT. TO-247AC. DESCRIPTION. ORDERING INFORMATION
Modelllinie für dieses Datenblatt
Textversion des Dokuments
IRFP9240, SiHFP9240
Vishay Siliconix
Power MOSFET FEATURES PRODUCT SUMMARY
• Dynamic dV/dt Rating VDS (V) - 200 V • Repetitive Avalanche Rated Available RDS(on) (Max.) (Ω) VGS = - 10 V 0.50
RoHS*
• P-Channel
COMPLIANT
Qg (Max.) (nC) 44 • Isolated Central Mounting Hole Qgs (nC) 7.1 • Fast Switching Qgd (nC) 27 • Ease of Paralleling Configuration Single • Simple Drive Requirements S • Compliant to RoHS Directive 2002/95/EC
TO-247AC DESCRIPTION
G Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S The TO-247AC package is preferred for D D G commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The P-Channel MOSFET TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
ORDERING INFORMATION
Package TO-247AC IRFP9240PbF Lead (Pb)-free SiHFP9240-E3 IRFP9240 SnPb SiHFP9240
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS - 200 V Gate-Source Voltage VGS ± 20 T - 12 Continuous Drain Current V C = 25 °C GS at - 10 V ID T A C = 100 °C - 7.5 Pulsed Drain Currenta IDM - 48 Linear Derating Factor 1.2 W/°C Single Pulse Avalanche Energyb EAS 790 mJ Repetitive Avalanche Currenta IAR - 12 A Repetitive Avalanche Energya EAR 15 mJ Maximum Power Dissipation TC = 25 °C PD 150 W Peak Diode Recovery dV/dtc dV/dt - 5.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 50 V, starting TJ = 25 °C, L = 8.2 mH, Rg = 25 Ω, IAS = - 12 A (see fig. 12). c. ISD ≤ - 12 A, dI/dt ≤ 150 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91239 www.vishay.com S11-0444-Rev. B, 14-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Vishay Siliconix
Power MOSFET FEATURES PRODUCT SUMMARY
• Dynamic dV/dt Rating VDS (V) - 200 V • Repetitive Avalanche Rated Available RDS(on) (Max.) (Ω) VGS = - 10 V 0.50
RoHS*
• P-Channel
COMPLIANT
Qg (Max.) (nC) 44 • Isolated Central Mounting Hole Qgs (nC) 7.1 • Fast Switching Qgd (nC) 27 • Ease of Paralleling Configuration Single • Simple Drive Requirements S • Compliant to RoHS Directive 2002/95/EC
TO-247AC DESCRIPTION
G Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S The TO-247AC package is preferred for D D G commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The P-Channel MOSFET TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
ORDERING INFORMATION
Package TO-247AC IRFP9240PbF Lead (Pb)-free SiHFP9240-E3 IRFP9240 SnPb SiHFP9240
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS - 200 V Gate-Source Voltage VGS ± 20 T - 12 Continuous Drain Current V C = 25 °C GS at - 10 V ID T A C = 100 °C - 7.5 Pulsed Drain Currenta IDM - 48 Linear Derating Factor 1.2 W/°C Single Pulse Avalanche Energyb EAS 790 mJ Repetitive Avalanche Currenta IAR - 12 A Repetitive Avalanche Energya EAR 15 mJ Maximum Power Dissipation TC = 25 °C PD 150 W Peak Diode Recovery dV/dtc dV/dt - 5.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 50 V, starting TJ = 25 °C, L = 8.2 mH, Rg = 25 Ω, IAS = - 12 A (see fig. 12). c. ISD ≤ - 12 A, dI/dt ≤ 150 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91239 www.vishay.com S11-0444-Rev. B, 14-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000