Datasheet T2035H-8T (STMicroelectronics) - 4

T2035H-8T Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Maximum power dissipation versus on-state Figure 2. On-state RMS current versus case temperature RMS current
IT(RMS)(A) P(W) 25 25 α = 180° α = 180° 20 20 15 15 10 10 5 5 180° IT T 0 (RMS)(A) c(°C) 0 0 2 4 6 8 10 12 14 16 18 20 0 25 50 75 100 125 150
Figure 3. On-state RMS current versus ambient Figure 4. On-state characteristics (maximum values) temperature (free air convection)
ITM(A) IT(RMS)(A) 1000 3.5 T α = 180° j max. 3.0 Vto = 0.8 V Rd = 19 mΩ 2.5 100 2.0 Tj = 150 °C 1.5 10 1.0 Tj = 25 °C 0.5 Ta(°C) VTM(V) 1 0 0 1 2 3 4 5 0 25 50 75 100 125 150
Figure 6. Recommended maximum case-to-ambient Figure 5. Relative variation of thermal impedance versus thermal resistance versus ambient temperature for pulse duration different peak off-state voltages
K = [Zth/Rth] Rth(c - a) (°C/W) (for heatsink sizing to avoid thermal runaway) 70 1.0E+00 Junction-to-ambiant thermal resistance : Typical 60°C/W (without heatsink) 60 Zth(j-c) VDRM=VRRM VDRM=VRRM =400 V =200 V 50 1.0E-01 VDRM=VRRM Z = 600 V th(j-a) 40 30 VDRM=VRRM 1.0E-02 = 800 V 20 tp(s) 10 With 15°C/W heatsink 1.0E-03 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 1E+03 1E+04
Ta (°C)
0 20 40 60 80 100 120 140
DS13158
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Rev 3 page 4/11
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 TO-220AB package information 3 Ordering information Revision history