link to page 3 link to page 3 link to page 3 link to page 3 T1235H-8GCharacteristicsTable 3. Static characteristicsSymbolTest conditionsTjValueUnit VTM (1) ITM = 17 A, tp = 380 µs 25 °C Max. 1.50 V VTO (1) Threshold voltage 150 °C Max. 0.80 V R (1) D Dynamic resistance 150 °C Max. 32 mΩ 25 °C 2.0 µA VD = VR = VDRM = VRRM Max. IDRM/IRRM 150°C 4.5 mA VD = VR = 400 V, peak voltage 150 °C Max. 1.7 mA 1. For both polarities of A2 referenced to A1. Table 4. Thermal resistanceSymbolParameterValueUnit Rth(j-c) Junction to case (AC) Max. 1.1 °C/W Rth(j-a) Junction to ambient (S (1) CU = 2 cm2) Typ. 45 °C/W 1. Scu : copper pad surface under tab, 35 μm copper thickness on FR4 PCB. DS13429 - Rev 2page 3/12 Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 D²PAK package information 3 Ordering information Revision history