Datasheet AUIRL7732S2TR, AUIRL7732S2TR1 (International Rectifier) - 4
| Hersteller | International Rectifier |
| Beschreibung | Automotive Grade. DirectFET Power MOSFET |
| Seiten / Seite | 11 / 4 — Fig 1. Fig 2. Fig 3. Fig 4. Fig 5. Fig 6 |
| Dateiformat / Größe | PDF / 221 Kb |
| Dokumentensprache | Englisch |
Fig 1. Fig 2. Fig 3. Fig 4. Fig 5. Fig 6
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AUIRL7732S2TR/TR1 1000 1000 VGS ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH VGS TOP 10V TOP 10V Tj = 25°C 8.0V Tj = 175°C 8.0V ) 6.0V A 6.0V ( A 4.5V 4.5V t 100 ( n 3.5V t 3.5V e n r 3.0V e 3.0V r rr 100 u 2.8V u 2.8V C BOTTOM 2.5V BOTTOM 2.5V C e c e r c 10 u r o uo S- S o - t o - t n - i n 10 a i r ar D 1 , D , 2.5V I D I D 2.5V 0.1 1 0.1 1 10 100 1000 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics ) 16 ) Ω 16 Ω m( m ID = 35A ( Vgs = 10V e 14 c e 14 n c a n t a s t i 12 s s i 12 e se R R n 10 n 10 TJ = 125°C O TJ = 125°C O e c e r 8 c u r 8 o uo S- S - o 6 t o 6 - t n - i n a i r 4 ar TJ = 25°C D 4 T D , J = 25°C ) ,) n 2 n o 2 ( o( S S D 0 D R R 0 2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 120 140 160 180 200 V I GS, Gate -to -Source Voltage (V) D, Drain Current (A)
Fig 3.
Typical On-Resistance vs. Gate Voltage
Fig 4.
Typical On-Resistance vs. Drain Current 1000 2.0 ec ID = 35A n ) at VGS = 10V A s ( i s t 100 T e n J = -40°C R e r T r J = 25°C n u 1.5 O C T J = 175°C e ) e cr d c e r u z u 10 o il o S- a S- ot mr o - t o - ni N ni ar ( 1.0 a r D D 1 , ) n I D o V ( DS = 25V S D ≤60μs PULSE WIDTH R 0.1 0.5 1 2 3 4 5 6 -60 -40 -20 0 20 40 60 80 100120140160180 V T GS, Gate-to-Source Voltage (V) J , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
Fig 6.
Normalized On-Resistance vs. Temperature 4 www.irf.com
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics ) 16 ) Ω 16 Ω m( m ID = 35A ( Vgs = 10V e 14 c e 14 n c a n t a s t i 12 s s i 12 e se R R n 10 n 10 TJ = 125°C O TJ = 125°C O e c e r 8 c u r 8 o uo S- S - o 6 t o 6 - t n - i n a i r 4 ar TJ = 25°C D 4 T D , J = 25°C ) ,) n 2 n o 2 ( o( S S D 0 D R R 0 2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 120 140 160 180 200 V I GS, Gate -to -Source Voltage (V) D, Drain Current (A)
Fig 3.
Typical On-Resistance vs. Gate Voltage
Fig 4.
Typical On-Resistance vs. Drain Current 1000 2.0 ec ID = 35A n ) at VGS = 10V A s ( i s t 100 T e n J = -40°C R e r T r J = 25°C n u 1.5 O C T J = 175°C e ) e cr d c e r u z u 10 o il o S- a S- ot mr o - t o - ni N ni ar ( 1.0 a r D D 1 , ) n I D o V ( DS = 25V S D ≤60μs PULSE WIDTH R 0.1 0.5 1 2 3 4 5 6 -60 -40 -20 0 20 40 60 80 100120140160180 V T GS, Gate-to-Source Voltage (V) J , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
Fig 6.
Normalized On-Resistance vs. Temperature 4 www.irf.com