Datasheet IRF6775MTRPbF (Infineon) - 4
| Hersteller | Infineon |
| Beschreibung | Digital Audio MOSFET |
| Seiten / Seite | 10 / 4 — IRF6775MTRPbF. Fig 7. Fig 8. Fig 10. Fig 9. Fig 11 |
| Dateiformat / Größe | PDF / 243 Kb |
| Dokumentensprache | Englisch |
IRF6775MTRPbF. Fig 7. Fig 8. Fig 10. Fig 9. Fig 11
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IRF6775MTRPbF
100 100 OPERATION IN THIS AREA LIMITED BY R ) DS(on) A ) ( A t ( n t 100μsec e n rr e 10 r u r 10 C u C ni a e r cr D u e o 1msec s S r - e TJ = 150°C o v t- DC e 1 T ni 1 R J = 25°C a , T r D J = -40°C D I S , Tc = 25°C I D Tj = 150°C 10msec VGS = 0V Single Pulse 0.1 0.1 0.0 0.5 1.0 1.5 0.1 1 10 100 1000 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
Fig 8.
Maximum Safe Operating Area 30 5.0 ) V( 25 4.5 I e D = 100μA g ) a I t D = 250μA l A( o t 20 V 4.0 n d e l rr o u hs C 15 e 3.5 r ni h a t r e D t , a 10 G 3.0 ) I D ht( S 5 G 2.5 V 0 2.0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 T T C , CaseTemperature (°C) J , Temperature ( °C )
Fig 10.
Threshold Voltage vs. Temperature
Fig 9.
Maximum Drain Current vs. Case Temperature 100 D = 0.50 ) 10 0.20 AJh 0.10 t Z 0.05 ( 1 e 0.02 s R R R R n 0.01 1 2 3 4 Ri (°C/W) R R R R τi (sec) o 1 2 3 4 p τ 1.2801 0.000322 s J τ τA e J τ τ A 8.7256 0.164798 R 0.1 1 τ τ τ l τ 2 3 4 a 1 τ2 τ3 τ4 21.750 2.25760 mr Ci= e τi/Ri 13.251 69 h Ci= τi/Ri T SINGLE PULSE 0.01 ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 26, 2014
100 100 OPERATION IN THIS AREA LIMITED BY R ) DS(on) A ) ( A t ( n t 100μsec e n rr e 10 r u r 10 C u C ni a e r cr D u e o 1msec s S r - e TJ = 150°C o v t- DC e 1 T ni 1 R J = 25°C a , T r D J = -40°C D I S , Tc = 25°C I D Tj = 150°C 10msec VGS = 0V Single Pulse 0.1 0.1 0.0 0.5 1.0 1.5 0.1 1 10 100 1000 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
Fig 8.
Maximum Safe Operating Area 30 5.0 ) V( 25 4.5 I e D = 100μA g ) a I t D = 250μA l A( o t 20 V 4.0 n d e l rr o u hs C 15 e 3.5 r ni h a t r e D t , a 10 G 3.0 ) I D ht( S 5 G 2.5 V 0 2.0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 T T C , CaseTemperature (°C) J , Temperature ( °C )
Fig 10.
Threshold Voltage vs. Temperature
Fig 9.
Maximum Drain Current vs. Case Temperature 100 D = 0.50 ) 10 0.20 AJh 0.10 t Z 0.05 ( 1 e 0.02 s R R R R n 0.01 1 2 3 4 Ri (°C/W) R R R R τi (sec) o 1 2 3 4 p τ 1.2801 0.000322 s J τ τA e J τ τ A 8.7256 0.164798 R 0.1 1 τ τ τ l τ 2 3 4 a 1 τ2 τ3 τ4 21.750 2.25760 mr Ci= e τi/Ri 13.251 69 h Ci= τi/Ri T SINGLE PULSE 0.01 ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 26, 2014