Datasheet K857PE (Vishay) - 3

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Beschreibung4-Quadrant Silicon PIN Photodiode
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K857PE

K857PE

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K857PE
www.vishay.com Vishay Semiconductors Axis Title Axis Title 115 10000 ) 100 10000 (% ) 90 V = 5 V, λ = 850 nm 110 R (% ity 80 tiv 70 105 1000 nsi 1000 e S 60 ne ne ine ne ne 100 50 ectral 1st li 2nd li p 1st li 2nd l 2nd li 40 e Reverse Ligth Current 95 100 v 100 30 ative S el elati R R 20 90 - - l. l re 10 ,re S I ra 85 10 0 10 -40 -20 0 20 40 60 80 100 400 500 600 700 800 900 1000 1100 T - Ambient Temperature (°C) amb λ - Wavelength (nm) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Fig. 5 - Relative Spectral Sensitivity vs. Wavelength Axis Title Axis Tit 0° le 10° 20° 100 10000 10000 30° V = 5 V, λ = 850 nm ) R (μA ent 10 1000 itivity rrent s 1000 40° u 1.0 ine ne ne ine Sen isplacem ne ght C 0.9 tive 1st li 50° 2nd l 2nd li 2nd l 2nd li ela 0.8 1 100 R gular D - 100 n 60° everse Li l. A R re - - S φ 0.7 70° I ra 80° 0.1 10 10 0.01 0.1 1 10 0.6 0.4 0.2 0 E - Irradiance (mW/cm2) e 1st line Fig. 3 - Reverse Light Current vs. Irradiance Fig. 6 - Relative Sensitivity vs. Angular Displacement Axis Title 100 10000 5 mW/cm2 ) (μA 1 mW/cm2 10 1000 rrent u 0.5 mW/cm2 ine 0.1 mW/cm2 ne ne ght C 1 1st li 2nd l 2nd li 0.05 mW/cm2 100 everse Li R 0.1 - 0.01 mW/cm2 I ra λ = 850 nm 0.01 10 0.01 0.1 1 10 V - Reverse Voltage (V) R Fig. 4 - Reverse Light Current vs. Reverse Voltage Rev. 1.0, 10-Sep-2020
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