Datasheet IRG4PH40UDPbF (International Rectifier) - 6
| Hersteller | International Rectifier |
| Beschreibung | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. UltraFast CoPack IGBT |
| Seiten / Seite | 11 / 6 — Fig. 11 -. Fig. 12. Fig. 13 |
| Dateiformat / Größe | PDF / 689 Kb |
| Dokumentensprache | Englisch |
Fig. 11 -. Fig. 12. Fig. 13
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Textversion des Dokuments
IRG4PH40UDPbF 16 1000 G 10 Ω J ° V = 20V GE T = 125 C o J R = Ohm T = 150 C V = 800V CC V = 15V GE 12 100 8 10 4 Total Switching Losses (mJ) I , Collector-to-Emitter Current (A) C SAFE OPERATING AREA 0 1 0 10 20 30 40 50 1 10 100 1000 10000 I , Collector-to-emitter Current (A) C V , Collector-to-Emitter Voltage (V) CE
Fig. 11 -
Typical Switching Losses vs.
Fig. 12
- Turn-Off SOA Collector-to-Emitter Current 100 ) A ( F I - rrent u d C ar 10 rw o T = 150°C F J us T = 125°C J taneo T = 25°C J n sta In 1 0 2 4 6 8 10 Fo rwa rd Voltage Drop - V FM (V)
Fig. 13
- Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com
Fig. 11 -
Typical Switching Losses vs.
Fig. 12
- Turn-Off SOA Collector-to-Emitter Current 100 ) A ( F I - rrent u d C ar 10 rw o T = 150°C F J us T = 125°C J taneo T = 25°C J n sta In 1 0 2 4 6 8 10 Fo rwa rd Voltage Drop - V FM (V)
Fig. 13
- Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com